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VS-3C08ED07T-M3/I
Silicon Carbide Schottky Diode, eSMP Series, Single, 650 V, 8 A, 22 nC, SMPD
Image is for illustrative purposes only. Please refer to product description.
| Manufacturer | VISHAY |
|---|---|
| Manufacturer Part No | VS-3C08ED07T-M3/ICopy |
| Manufacturer Standard Lead Time | 12 weeks |
| Order Code | Re-Reel4486775RL Cut Tape4486775 |
| Product Range | eSMP Series |
| Your Part Number | |
| Technical Datasheet |
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Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | Php197.100 | Php197.10 |
| Total Price | Php197.10 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | Php197.100 |
| 10+ | Php135.900 |
| 100+ | Php116.100 |
| 500+ | Php109.800 |
| 1000+ | Php92.700 |
| 5000+ | Php90.900 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
| Manufacturer | VISHAY |
|---|---|
| Manufacturer Part No | VS-3C08ED07T-M3/ICopy |
| Manufacturer Standard Lead Time | 12 weeks |
| Order Code | Re-Reel4486775RL Cut Tape4486775 |
| Product Range | eSMP Series |
| Technical Datasheet | |
| Product Range | eSMP Series |
| Diode Configuration | Single |
| Repetitive Peak Reverse Voltage | 650V |
| Average Forward Current | 8A |
| Total Capacitive Charge | 22nC |
| Diode Case Style | SMPD |
| No. of Pins | 2 Pin |
| Operating Temperature Max | 175°C |
| Diode Mounting | Surface Mount |
| Qualification | - |
| SVHC | No SVHC (27-Jun-2024) |
Product Overview
VS-3C08ED07T-M3/I is a 650V, 8A Gen 3 power SiC merged PIN schottky diode. This wide band gap SiC based 650V Schottky diode, designed for high performance and ruggedness. It is an optimum choice for high speed hard switching and efficient operation over a wide temperature range, it is also recommended for all applications suffering from Silicon ultrafast recovery behaviour. Typical applications include AC/DC PFC and DC/DC ultra high frequency output rectification in FBPS and LLC converters.
- Creepage and clearance distance of 3.6mm minimum
- Very low profile – typical height of 1.7mm
- Majority carrier diode using schottky technology on SiC wide band gap material
- Improved VF and efficiency by thin wafer technology
- Positive VF temperature coefficient for easy paralleling
- Virtually no recovery tail and no switching losses
- Temperature invariant switching behaviour
- 175°C maximum operating junction temperature
- Meets JESD 201 class 2 whisker test
- MPS structure for high ruggedness to forward current surge events
Technical Specifications
| Product Range | eSMP Series |
|---|---|
| Repetitive Peak Reverse Voltage | 650V |
| Total Capacitive Charge | 22nC |
| No. of Pins | 2 Pin |
| Diode Mounting | Surface Mount |
| SVHC | No SVHC (27-Jun-2024) |
| Diode Configuration | Single |
|---|---|
| Average Forward Current | 8A |
| Diode Case Style | SMPD |
| Operating Temperature Max | 175°C |
| Qualification | - |
Technical Docs (1)
Legislation and Environmental
| Country of Origin: Country in which last significant manufacturing process was carried outCountry of Origin: | China Country in which last significant manufacturing process was carried out |
|---|---|
| Tariff No: | 85411000 |
| US ECCN: | EAR99 |
| EU ECCN: | NLR |
| RoHS Compliant: | Yes RoHS |
| RoHS Phthalates Compliant: | Yes RoHS |
| SVHC: | No SVHC (27-Jun-2024) |
| Download Product Compliance Certificate | Product Compliance Certificate |
| Weight (kg): | .00052 |