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SQS966ENW-T1_GE3
Dual MOSFET, N Channel, 60 V, 60 V, 6 A, 6 A, 0.028 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSQS966ENW-T1_GE3
Order Code2932992RL
Product RangeTrenchFET Series
Your Part Number
Technical Datasheet
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| Quantity | Price |
|---|---|
| 100+ | Php33.500 |
| 500+ | Php30.000 |
| 1000+ | Php24.200 |
| 5000+ | Php23.300 |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
Php3,350.00
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSQS966ENW-T1_GE3
Order Code2932992RL
Product RangeTrenchFET Series
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds N Channel60V
Drain Source Voltage Vds60V
Continuous Drain Current Id6A
Drain Source Voltage Vds P Channel60V
Continuous Drain Current Id N Channel6A
On Resistance Rds(on)0.028ohm
Continuous Drain Current Id P Channel6A
Drain Source On State Resistance N Channel0.028ohm
Transistor MountingSurface Mount
Drain Source On State Resistance P Channel0.028ohm
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Transistor Case StylePowerPAK 1212
Power Dissipation Pd27.8W
No. of Pins8Pins
Power Dissipation N Channel27.8W
Power Dissipation P Channel27.8W
Operating Temperature Max175°C
Product RangeTrenchFET Series
QualificationAEC-Q101
Automotive Qualification StandardAEC-Q101
SVHC0
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds N Channel
60V
Continuous Drain Current Id
6A
Continuous Drain Current Id N Channel
6A
Continuous Drain Current Id P Channel
6A
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Transistor Case Style
PowerPAK 1212
No. of Pins
8Pins
Power Dissipation P Channel
27.8W
Product Range
TrenchFET Series
Automotive Qualification Standard
AEC-Q101
SVHC
0
Channel Type
N Channel
Drain Source Voltage Vds
60V
Drain Source Voltage Vds P Channel
60V
On Resistance Rds(on)
0.028ohm
Drain Source On State Resistance N Channel
0.028ohm
Drain Source On State Resistance P Channel
0.028ohm
Gate Source Threshold Voltage Max
2V
Power Dissipation Pd
27.8W
Power Dissipation N Channel
27.8W
Operating Temperature Max
175°C
Qualification
AEC-Q101
MSL
MSL 1 - Unlimited
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:0
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000082