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SQJB42EP-T1_GE3
Dual MOSFET, N Channel, 40 V, 40 V, 30 A, 30 A, 7900 µohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSQJB42EP-T1_GE3
Order Code2729832RL
Product RangeTrenchFET Series
Your Part Number
Technical Datasheet
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| Quantity | Price |
|---|---|
| 100+ | Php53.000 |
| 500+ | Php41.400 |
| 1000+ | Php33.500 |
| 5000+ | Php32.900 |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
Php5,300.00
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSQJB42EP-T1_GE3
Order Code2729832RL
Product RangeTrenchFET Series
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds40V
Drain Source Voltage Vds N Channel40V
Drain Source Voltage Vds P Channel40V
Continuous Drain Current Id30A
Continuous Drain Current Id N Channel30A
On Resistance Rds(on)0.0079ohm
Continuous Drain Current Id P Channel30A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel7900µohm
Drain Source On State Resistance P Channel7900µohm
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Transistor Case StylePowerSO
Power Dissipation Pd48W
No. of Pins8Pins
Power Dissipation N Channel48W
Power Dissipation P Channel48W
Operating Temperature Max175°C
Product RangeTrenchFET Series
QualificationAEC-Q101
Automotive Qualification StandardAEC-Q101
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
40V
Drain Source Voltage Vds P Channel
40V
Continuous Drain Current Id N Channel
30A
Continuous Drain Current Id P Channel
30A
Drain Source On State Resistance N Channel
7900µohm
Rds(on) Test Voltage
10V
Transistor Case Style
PowerSO
No. of Pins
8Pins
Power Dissipation P Channel
48W
Product Range
TrenchFET Series
Automotive Qualification Standard
AEC-Q101
SVHC
No SVHC (25-Jun-2025)
Channel Type
N Channel
Drain Source Voltage Vds N Channel
40V
Continuous Drain Current Id
30A
On Resistance Rds(on)
0.0079ohm
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
7900µohm
Gate Source Threshold Voltage Max
3V
Power Dissipation Pd
48W
Power Dissipation N Channel
48W
Operating Temperature Max
175°C
Qualification
AEC-Q101
MSL
MSL 1 - Unlimited
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0001