SQJ504EP-T1_GE3
Dual MOSFET, Complementary N and P Channel, 40 V, 40 V, 30 A, 30 A, 6100 µohm
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| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | Php166.500 | Php166.50 |
| Total Price | Php166.50 | ||
| Quantity | Price |
|---|---|
| 1+ | Php166.500 |
| 10+ | Php107.600 |
| 100+ | Php72.500 |
| 500+ | Php58.100 |
| 1000+ | Php49.100 |
| 5000+ | Php48.200 |
Product Information
Product Overview
New AEC-Q101 automotive MOSFETs ffrom Vishay are manufactured on a dedicated process flow to instill ruggedness. Rated for a maximum junction temperature of 175 °C, the Vishay Siliconix AEC-Q101 qualified SQ series features low on-resistance n- and p-channel TrenchFET® technologies in lead (Pb)- and halogen-free SO packages. Options include the traditional D2PAK (TO-263) and DPAK (TO-252), as well as several PowerPAK® packages, which save space over the D2PAK, DPAK, and SO-8 while delivering similar on-resistance and thermal resistance. The SQ series also includes devices in ultra compact packages such as the TSOP-6, SOT-23, and SC-89.
Technical Specifications
Complementary N and P Channel
40V
30A
6100µohm
8Pins
34W
TrenchFET Series
MSL 1 - Unlimited
40V
30A
6100µohm
PowerPAK SO
34W
175°C
AEC-Q101
No SVHC (04-Feb-2026)
Technical Docs (1)
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate