Print Page
SQ1922AEEH-T1_GE3
Dual MOSFET, N Channel, 20 V, 20 V, 850 mA, 850 mA, 0.21 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSQ1922AEEH-T1_GE3
Order Code3104164RL
Product RangeTrenchFET Series
Your Part Number
Technical Datasheet
7,216 In Stock
Need more?
2811 Delivery in 1-2 Business Days(SG stock)
4405 Delivery in 3-4 Business Days(UK stock)
| Quantity | Price |
|---|---|
| 100+ | Php18.400 |
| 500+ | Php14.100 |
| 1000+ | Php10.600 |
| 5000+ | Php8.600 |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 5
Php1,840.00
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSQ1922AEEH-T1_GE3
Order Code3104164RL
Product RangeTrenchFET Series
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds N Channel20V
Drain Source Voltage Vds20V
Drain Source Voltage Vds P Channel20V
Continuous Drain Current Id850mA
On Resistance Rds(on)0.21ohm
Continuous Drain Current Id N Channel850mA
Continuous Drain Current Id P Channel850mA
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.21ohm
Rds(on) Test Voltage4.5V
Drain Source On State Resistance P Channel0.21ohm
Transistor Case StyleSOT-363
Gate Source Threshold Voltage Max2V
Power Dissipation Pd1.5W
No. of Pins6Pins
Power Dissipation N Channel1.5W
Power Dissipation P Channel1.5W
Operating Temperature Max175°C
Product RangeTrenchFET Series
QualificationAEC-Q101
Automotive Qualification StandardAEC-Q101
SVHCLead (07-Nov-2024)
Product Overview
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds N Channel
20V
Drain Source Voltage Vds P Channel
20V
On Resistance Rds(on)
0.21ohm
Continuous Drain Current Id P Channel
850mA
Drain Source On State Resistance N Channel
0.21ohm
Drain Source On State Resistance P Channel
0.21ohm
Gate Source Threshold Voltage Max
2V
No. of Pins
6Pins
Power Dissipation P Channel
1.5W
Product Range
TrenchFET Series
Automotive Qualification Standard
AEC-Q101
SVHC
Lead (07-Nov-2024)
Transistor Polarity
N Channel
Drain Source Voltage Vds
20V
Continuous Drain Current Id
850mA
Continuous Drain Current Id N Channel
850mA
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
4.5V
Transistor Case Style
SOT-363
Power Dissipation Pd
1.5W
Power Dissipation N Channel
1.5W
Operating Temperature Max
175°C
Qualification
AEC-Q101
MSL
MSL 1 - Unlimited
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.009