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SQ1539EH-T1_GE3
Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 850 mA, 850 mA, 0.21 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSQ1539EH-T1_GE3
Order Code3470722RL
Product RangeTrenchFET Series
Your Part Number
Technical Datasheet
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| Quantity | Price |
|---|---|
| 100+ | Php12.900 |
| 500+ | Php11.700 |
| 1500+ | Php11.500 |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 5
Php1,290.00
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSQ1539EH-T1_GE3
Order Code3470722RL
Product RangeTrenchFET Series
Technical Datasheet
Transistor PolarityComplementary N and P Channel
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds30V
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id850mA
On Resistance Rds(on)0.21ohm
Continuous Drain Current Id N Channel850mA
Continuous Drain Current Id P Channel850mA
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.21ohm
Drain Source On State Resistance P Channel0.21ohm
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.8V
Transistor Case StyleSC-70
No. of Pins6Pins
Power Dissipation Pd1.5W
Power Dissipation N Channel1.5W
Power Dissipation P Channel1.5W
Operating Temperature Max175°C
Product RangeTrenchFET Series
QualificationAEC-Q101
Automotive Qualification StandardAEC-Q101
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
Transistor Polarity
Complementary N and P Channel
Drain Source Voltage Vds
30V
Drain Source Voltage Vds P Channel
30V
On Resistance Rds(on)
0.21ohm
Continuous Drain Current Id P Channel
850mA
Drain Source On State Resistance N Channel
0.21ohm
Rds(on) Test Voltage
10V
Transistor Case Style
SC-70
Power Dissipation Pd
1.5W
Power Dissipation P Channel
1.5W
Product Range
TrenchFET Series
Automotive Qualification Standard
AEC-Q101
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds N Channel
30V
Continuous Drain Current Id
850mA
Continuous Drain Current Id N Channel
850mA
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
0.21ohm
Gate Source Threshold Voltage Max
1.8V
No. of Pins
6Pins
Power Dissipation N Channel
1.5W
Operating Temperature Max
175°C
Qualification
AEC-Q101
SVHC
No SVHC (25-Jun-2025)
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000002