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SIZ918DT-T1-GE3
Dual MOSFET, N Channel + Schottky, 30 V, 30 V, 28 A, 28 A, 0.01 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSIZ918DT-T1-GE3
Order Code2283687RL
Your Part Number
Technical Datasheet
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| Quantity | Price |
|---|---|
| 100+ | Php62.100 |
| 500+ | Php49.300 |
| 1000+ | Php39.700 |
| 5000+ | Php38.900 |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
Php6,210.00
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSIZ918DT-T1-GE3
Order Code2283687RL
Technical Datasheet
Transistor PolarityN Channel + Schottky
Channel TypeN Channel + Schottky
Drain Source Voltage Vds30V
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id28A
Continuous Drain Current Id N Channel28A
On Resistance Rds(on)0.01ohm
Continuous Drain Current Id P Channel28A
Drain Source On State Resistance N Channel0.01ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Drain Source On State Resistance P Channel0.01ohm
Transistor Case StylePowerPAIR
Gate Source Threshold Voltage Max1.2V
No. of Pins10Pins
Power Dissipation Pd100W
Power Dissipation N Channel100W
Power Dissipation P Channel100W
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The SIZ918DT-T1-GE3 is a dual N-channel MOSFET housed in a surface-mount package. It is suitable for notebook system power, POL and synchronous buck converter applications.
- Halogen-free
- TrenchFET® power MOSFET
- 100% Rg and UIS tested
Applications
Industrial, Power Management
Technical Specifications
Transistor Polarity
N Channel + Schottky
Drain Source Voltage Vds
30V
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id N Channel
28A
Continuous Drain Current Id P Channel
28A
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
0.01ohm
Gate Source Threshold Voltage Max
1.2V
Power Dissipation Pd
100W
Power Dissipation P Channel
100W
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (21-Jan-2025)
Channel Type
N Channel + Schottky
Drain Source Voltage Vds N Channel
30V
Continuous Drain Current Id
28A
On Resistance Rds(on)
0.01ohm
Drain Source On State Resistance N Channel
0.01ohm
Rds(on) Test Voltage
10V
Transistor Case Style
PowerPAIR
No. of Pins
10Pins
Power Dissipation N Channel
100W
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00012