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SI7232DN-T1-GE3
Dual MOSFET, N Channel, 20 V, 20 V, 25 A, 25 A, 0.0135 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSI7232DN-T1-GE3
Order Code3772777RL
Product RangeTrenchFET Series
Your Part Number
Technical Datasheet
1,498 In Stock
12,000 more incoming. You can reserve stock now
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| Quantity | Price |
|---|---|
| 100+ | Php34.500 |
| 500+ | Php27.200 |
| 1000+ | Php24.700 |
| 5000+ | Php22.600 |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
Php3,450.00
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI7232DN-T1-GE3
Order Code3772777RL
Product RangeTrenchFET Series
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds N Channel20V
Drain Source Voltage Vds20V
Continuous Drain Current Id25A
Drain Source Voltage Vds P Channel20V
Continuous Drain Current Id N Channel25A
On Resistance Rds(on)0.0135ohm
Continuous Drain Current Id P Channel25A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.0135ohm
Rds(on) Test Voltage4.5V
Drain Source On State Resistance P Channel0.0135ohm
Transistor Case StylePowerPAK 1212
Gate Source Threshold Voltage Max1V
No. of Pins8Pins
Power Dissipation Pd23W
Power Dissipation N Channel23W
Power Dissipation P Channel23W
Operating Temperature Max150°C
Product RangeTrenchFET Series
Qualification-
Automotive Qualification Standard-
SVHCLead (21-Jan-2025)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds N Channel
20V
Continuous Drain Current Id
25A
Continuous Drain Current Id N Channel
25A
Continuous Drain Current Id P Channel
25A
Drain Source On State Resistance N Channel
0.0135ohm
Drain Source On State Resistance P Channel
0.0135ohm
Gate Source Threshold Voltage Max
1V
Power Dissipation Pd
23W
Power Dissipation P Channel
23W
Product Range
TrenchFET Series
Automotive Qualification Standard
-
Transistor Polarity
N Channel
Drain Source Voltage Vds
20V
Drain Source Voltage Vds P Channel
20V
On Resistance Rds(on)
0.0135ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
4.5V
Transistor Case Style
PowerPAK 1212
No. of Pins
8Pins
Power Dissipation N Channel
23W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (21-Jan-2025)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000081