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SI4599DY-T1-GE3
Dual MOSFET, Complementary N and P Channel, 40 V, 40 V, 6.8 A, 6.8 A, 0.0295 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSI4599DY-T1-GE3
Order Code1779270RL
Your Part Number
Technical Datasheet
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| Quantity | Price |
|---|---|
| 100+ | Php39.900 |
| 500+ | Php31.400 |
| 1000+ | Php28.400 |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 5
Php3,990.00
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI4599DY-T1-GE3
Order Code1779270RL
Technical Datasheet
Channel TypeComplementary N and P Channel
Transistor PolarityComplementary N and P Channel
Drain Source Voltage Vds N Channel40V
Drain Source Voltage Vds40V
Continuous Drain Current Id6.8A
Drain Source Voltage Vds P Channel40V
Continuous Drain Current Id N Channel6.8A
On Resistance Rds(on)0.0295ohm
Continuous Drain Current Id P Channel6.8A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.0295ohm
Drain Source On State Resistance P Channel0.0295ohm
Rds(on) Test Voltage10V
Transistor Case StyleSOIC
Gate Source Threshold Voltage Max1.4V
No. of Pins8Pins
Power Dissipation Pd3W
Power Dissipation N Channel3W
Power Dissipation P Channel3.1W
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The SI4599DY-T1-GE3 is a 40V Dual N and P-channel TrenchFET® Power MOSFET. Suitable for backlight inverter for LCD display and full bridge converter applications. The surface-mounted LITTLE FOOT® power MOSFET uses integrated circuit and small-signal packages which have been modified to provide the heat transfer capabilities required by power devices.
- Halogen-free according to IEC 61249-2-21 definition
- 100% Rg Tested
- 100% UIS Tested
Applications
Power Management
Technical Specifications
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds N Channel
40V
Continuous Drain Current Id
6.8A
Continuous Drain Current Id N Channel
6.8A
Continuous Drain Current Id P Channel
6.8A
Drain Source On State Resistance N Channel
0.0295ohm
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
1.4V
Power Dissipation Pd
3W
Power Dissipation P Channel
3.1W
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (25-Jun-2025)
Transistor Polarity
Complementary N and P Channel
Drain Source Voltage Vds
40V
Drain Source Voltage Vds P Channel
40V
On Resistance Rds(on)
0.0295ohm
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
0.0295ohm
Transistor Case Style
SOIC
No. of Pins
8Pins
Power Dissipation N Channel
3W
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Israel
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Israel
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000126