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SI4532CDY-T1-GE3
Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 6 A, 6 A, 0.038 ohm
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ManufacturerVISHAY
Manufacturer Part NoSI4532CDY-T1-GE3
Order Code3879333
Your Part Number
Technical Datasheet
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI4532CDY-T1-GE3
Order Code3879333
Technical Datasheet
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id N Channel6A
Continuous Drain Current Id P Channel6A
Drain Source On State Resistance N Channel0.038ohm
Drain Source On State Resistance P Channel0.038ohm
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel2.78W
Power Dissipation P Channel2.78W
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id P Channel
6A
Drain Source On State Resistance P Channel
0.038ohm
No. of Pins
8Pins
Power Dissipation P Channel
2.78W
Product Range
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds N Channel
30V
Continuous Drain Current Id N Channel
6A
Drain Source On State Resistance N Channel
0.038ohm
Transistor Case Style
SOIC
Power Dissipation N Channel
2.78W
Operating Temperature Max
150°C
Qualification
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0005