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ManufacturerVISHAY
Manufacturer Part NoIRFD220PBF
Order Code9102388
Your Part Number
Technical Datasheet
105 In Stock
Need more?
105 Delivery in 1-2 Business Days(SG stock)
Available until stock is exhausted
| Quantity | Price |
|---|---|
| 1+ | Php64.400 |
| 10+ | Php45.600 |
| 100+ | Php36.600 |
| 500+ | Php30.600 |
| 1000+ | Php26.200 |
| 5000+ | Php24.600 |
Price for:Each
Minimum: 1
Multiple: 1
Php64.40
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Overview
The IRFD220PBF is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The package is a machine-insertable case style which can be stacked in multiple combinations on standard 0.1-inch pin centres. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1W.
- Dynamic dV/dt rating
- For automatic insertion
- End stackable
- Repetitive avalanche rated
- Ease of paralleling
- Simple drive requirements
Applications
Industrial, Power Management
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Transistor Mounting
Through Hole
Qualification
-
Transistor Case Style
DIP
Product Range
-
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000574