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SI7445DP-T1-E3
MOSFET, P, SO-8
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSI7445DP-T1-E3Copy
Order Code
Re-Reel1612652RL
Cut Tape1612652
Your Part Number
No Longer Manufactured
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI7445DP-T1-E3Copy
Order Code
Re-Reel1612652RL
Cut Tape1612652
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id19A
Drain Source On State Resistance7700µohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max1V
Power Dissipation1.9W
Operating Temperature Max150°C
Product Range-
Qualification-
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Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
19A
Transistor Case Style
SOIC
Rds(on) Test Voltage
4.5V
Power Dissipation
1.9W
Product Range
-
Drain Source Voltage Vds
20V
Drain Source On State Resistance
7700µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1V
Operating Temperature Max
150°C
Qualification
-
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.001