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SI2305DS-T1-E3
MOSFET, P, TO-236
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSI2305DS-T1-E3Copy
Order Code
Re-Reel1470101RL
Cut Tape1470101
Your Part Number
No Longer Manufactured
Packaging Options
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2305DS-T1-E3Copy
Order Code
Re-Reel1470101RL
Cut Tape1470101
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds8V
Continuous Drain Current Id3.5A
Drain Source On State Resistance0.052ohm
Transistor Case StyleTO-236
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max800mV
Power Dissipation1.25W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (15-Jun-2015)
Alternatives for SI2305DS-T1-E3
4 Products Found
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
3.5A
Transistor Case Style
TO-236
Rds(on) Test Voltage
4.5V
Power Dissipation
1.25W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (15-Jun-2015)
Drain Source Voltage Vds
8V
Drain Source On State Resistance
0.052ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
800mV
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Associated Products
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:No SVHC (15-Jun-2015)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0001