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TTC5200(Q)
Bipolar (BJT) Single Transistor, NPN, 230 V, 15 A, 150 W, TO-3PL, Through Hole
Image is for illustrative purposes only. Please refer to product description.
| Manufacturer | TOSHIBA |
|---|---|
| Manufacturer Part No | TTC5200(Q) Copy |
| Manufacturer Standard Lead Time | 22 weeks |
| Order Code | 1901957 |
| Your Part Number | |
| Technical Datasheet |
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| Quantity | Price |
|---|---|
| 1+ | Php387.000 |
| 10+ | Php235.800 |
| 100+ | Php180.500 |
| 500+ | Php154.400 |
| 1000+ | Php140.000 |
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Product Information
| Manufacturer | TOSHIBA |
|---|---|
| Manufacturer Part No | TTC5200(Q) Copy |
| Manufacturer Standard Lead Time | 22 weeks |
| Order Code | 1901957 |
| Technical Datasheet | |
| Transistor Polarity | NPN |
| Collector Emitter Voltage Max | 230V |
| Continuous Collector Current | 15A |
| Power Dissipation | 150W |
| Transistor Case Style | TO-3PL |
| Transistor Mounting | Through Hole |
| No. of Pins | 3Pins |
| Transition Frequency | 30MHz |
| DC Current Gain hFE Min | 80hFE |
| Operating Temperature Max | 150°C |
| Product Range | - |
| Qualification | - |
| MSL | - |
| SVHC | No SVHC (25-Jun-2020) |
Product Overview
The TTC5200 from Toshiba is a through hole NPN silicon transistor in TO-3P package with high collector voltage. This device is commonly used for power amplification.
- Collector to emitter voltage (Vce) is 230V
- Collector to base voltage of 230V
- Collector current (Ic) is 15A
- Power dissipation (pd) is 150W
- Junction temperature of 150°C
- Current gain of 35 at 7A collector current
- Collector to emitter saturation voltage of 3V
- Collector to emitter breakdown voltage of 230V
Applications
Signal Processing, Power Management, Portable Devices, Consumer Electronics, Industrial
Technical Specifications
| Transistor Polarity | NPN |
|---|---|
| Continuous Collector Current | 15A |
| Transistor Case Style | TO-3PL |
| No. of Pins | 3Pins |
| DC Current Gain hFE Min | 80hFE |
| Product Range | - |
| MSL | - |
| Collector Emitter Voltage Max | 230V |
|---|---|
| Power Dissipation | 150W |
| Transistor Mounting | Through Hole |
| Transition Frequency | 30MHz |
| Operating Temperature Max | 150°C |
| Qualification | - |
| SVHC | No SVHC (25-Jun-2020) |
Technical Docs (1)
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Associated Products
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Legislation and Environmental
| Country of Origin: Country in which last significant manufacturing process was carried outCountry of Origin: | Japan Country in which last significant manufacturing process was carried out |
|---|---|
| Tariff No: | 85412900 |
| US ECCN: | EAR99 |
| EU ECCN: | NLR |
| RoHS Compliant: | Yes RoHS |
| RoHS Phthalates Compliant: | Yes RoHS |
| SVHC: | No SVHC (25-Jun-2020) |
| Download Product Compliance Certificate | Product Compliance Certificate |
| Weight (kg): | .015876 |