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RN1116MFV,L3F(T
Bipolar Pre-Biased / Digital Transistor, Single NPN, 50 V, 100 mA, 4.7 kohm, 10 kohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerTOSHIBA
Manufacturer Part NoRN1116MFV,L3F(T
Order Code4274875
Also Known AsRN1116MFV, RN1116MFV,L3F
Your Part Number
Technical Datasheet
Product Information
ManufacturerTOSHIBA
Manufacturer Part NoRN1116MFV,L3F(T
Order Code4274875
Also Known AsRN1116MFV, RN1116MFV,L3F
Technical Datasheet
Transistor PolaritySingle NPN
Collector Emitter Voltage Max NPN50V
Collector Emitter Voltage Max PNP-
Continuous Collector Current100mA
Base Input Resistor R14.7kohm
Base Emitter Resistor R210kohm
Transistor Case StyleSOT-723
No. of Pins3 Pin
Transistor MountingSurface Mount
Power Dissipation150mW
Operating Temperature Max150°C
DC Current Gain hFE Min50hFE
Product Range-
Qualification-
Technical Specifications
Transistor Polarity
Single NPN
Collector Emitter Voltage Max PNP
-
Base Input Resistor R1
4.7kohm
Transistor Case Style
SOT-723
Transistor Mounting
Surface Mount
Operating Temperature Max
150°C
Product Range
-
Collector Emitter Voltage Max NPN
50V
Continuous Collector Current
100mA
Base Emitter Resistor R2
10kohm
No. of Pins
3 Pin
Power Dissipation
150mW
DC Current Gain hFE Min
50hFE
Qualification
-
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Thailand
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Thailand
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001