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2SC5200-O(Q)
Bipolar (BJT) Single Transistor, NPN, 230 V, 15 A, 150 W, TO-3PL, Through Hole
Image is for illustrative purposes only. Please refer to product description.
| Manufacturer | TOSHIBA |
|---|---|
| Manufacturer Part No | 2SC5200-O(Q)Copy |
| Manufacturer Standard Lead Time | 22 weeks |
| Order Code | 3870093 |
| Also Known As | 2SC5200 |
| Your Part Number | |
| Technical Datasheet |
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| Quantity | Price |
|---|---|
| 1+ | Php282.200 |
| 10+ | Php185.900 |
| 100+ | Php145.800 |
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Product Information
| Manufacturer | TOSHIBA |
|---|---|
| Manufacturer Part No | 2SC5200-O(Q)Copy |
| Manufacturer Standard Lead Time | 22 weeks |
| Order Code | 3870093 |
| Also Known As | 2SC5200 |
| Technical Datasheet | |
| Transistor Polarity | NPN |
| Collector Emitter Voltage Max | 230V |
| Continuous Collector Current | 15A |
| Power Dissipation | 150W |
| Transistor Case Style | TO-3PL |
| Transistor Mounting | Through Hole |
| No. of Pins | 3Pins |
| Transition Frequency | 30MHz |
| DC Current Gain hFE Min | 55hFE |
| Operating Temperature Max | 150°C |
| Product Range | - |
| Qualification | - |
Product Overview
2SC5200-O(Q) is a silicon NPN triple diffused type transistor for power amplifier application.
- High breakdown voltage VCEO = 230V (min)
- Complementary to 2SA1943
- Suitable for use in 100W high fidelity audio amplifier’s output stage
- 150W collector power dissipation (Tc=25°C), 200pF (VCB=10V, IE=0, f=1MHz) collector O/P capacitance
- Collector cut-off current is 5μA max (VCB = 230V, IE = 0A, Ta = 25°C)
- Emitter cut-off current is 5μA max (VEB = 5V, IC = 0A, Ta = 25°C)
- Collector-emitter breakdown voltage is 230V min (IC = 50mA, IB = 0A, Ta = 25°C)
- Collector-emitter saturation voltage is 0.4V typ (IC = 8A, IB = 0.8A, Ta = 25°C)
- Transition frequency is 30MHz typ (VCE = 5V, IC = 1A, Ta = 25°C)
- Junction temperature is 150°C
Technical Specifications
| Transistor Polarity | NPN |
|---|---|
| Continuous Collector Current | 15A |
| Transistor Case Style | TO-3PL |
| No. of Pins | 3Pins |
| DC Current Gain hFE Min | 55hFE |
| Product Range | - |
| Collector Emitter Voltage Max | 230V |
|---|---|
| Power Dissipation | 150W |
| Transistor Mounting | Through Hole |
| Transition Frequency | 30MHz |
| Operating Temperature Max | 150°C |
| Qualification | - |
Technical Docs (1)
Legislation and Environmental
| Country of Origin: Country in which last significant manufacturing process was carried outCountry of Origin: | Japan Country in which last significant manufacturing process was carried out |
|---|---|
| Tariff No: | 85412900 |
| US ECCN: | EAR99 |
| EU ECCN: | NLR |
| RoHS Compliant: | Y-Ex RoHS |
| RoHS Phthalates Compliant: | Yes RoHS |
| Download Product Compliance Certificate | Product Compliance Certificate |
| Weight (kg): | .009525 |