Print Page
Image is for illustrative purposes only. Please refer to product description.
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTD5NM50T4
Order Code1291965
Your Part Number
Technical Datasheet
No Longer Manufactured
Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTD5NM50T4
Order Code1291965
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds500V
Continuous Drain Current Id7.5A
Drain Source On State Resistance0.8ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation100W
Operating Temperature Max150°C
Product Range-
Qualification-
Product Overview
The STD5NM50T4 is a MDmesh™ N-channel Power MOSFET associates the multiple drain process with PowerMESH™ horizontal layout. The device has an outstanding low On-resistance, impressively high dV/dt and excellent avalanche characteristics. The strip technique yields overall dynamic performance. It is suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.
- 0.7Ω RDS (ON)
- High dV/dt and avalanche capabilities
- 100% Avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
- Tight process control and high manufacturing yields
Applications
Power Management, Industrial
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
7.5A
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
100W
Product Range
-
Drain Source Voltage Vds
500V
Drain Source On State Resistance
0.8ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
Operating Temperature Max
150°C
Qualification
-
Technical Docs (1)
Associated Products
4 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00031