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BD239C
Bipolar (BJT) Single Transistor, NPN, 100 V, 2 A, 2 W, TO-220, Through Hole
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No Longer Stocked
Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoBD239C
Order Code9801545
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max100V
Continuous Collector Current2A
Power Dissipation2W
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Transition Frequency-
Operating Temperature Max150°C
Product Range-
Qualification-
Product Overview
The BD239C is a 100V Silicon NPN Power Transistor manufactured in planar technology with base island layout. The transistor shows exceptional high gain performance coupled with very low saturation voltage. Fast switching times and very low saturation voltage resulting in reduced switching and conduction losses.
- Well-controlled hFE parameter for increased reliability
- Collector-base voltage (Vcbo = 100V)
- Emitter-base voltage (Vebo = 5V)
Applications
Industrial
Technical Specifications
Transistor Polarity
NPN
Continuous Collector Current
2A
Transistor Case Style
TO-220
Transition Frequency
-
Product Range
-
Collector Emitter Voltage Max
100V
Power Dissipation
2W
Transistor Mounting
Through Hole
Operating Temperature Max
150°C
Qualification
-
Technical Docs (2)
Associated Products
4 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.002