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GD200HFX65C1S

IGBT Module, Half Bridge, 250 A, 1.45 V, 612 W, 150 °C, Module

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Manufacturer	STARPOWER
Manufacturer Part No	GD200HFX65C1SCopy
Manufacturer Standard Lead Time	24 weeks
Order Code	3549241
Your Part Number
Technical Datasheet	Data Sheet See all Technical Docs

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Php3,304.80

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Manufacturer	STARPOWER
Manufacturer Part No	GD200HFX65C1SCopy
Manufacturer Standard Lead Time	24 weeks
Order Code	3549241
Technical Datasheet	Data Sheet
IGBT Configuration	Half Bridge
Continuous Collector Current	250A
Collector Emitter Saturation Voltage	1.45V
Power Dissipation	612W
Operating Temperature Max	150°C
Transistor Case Style	Module
IGBT Termination	Stud
Collector Emitter Voltage Max	650V
IGBT Technology	Trench Field Stop
Transistor Mounting	Panel
Product Range	-
SVHC	To Be Advised

Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.

IGBT Configuration	Half Bridge
Collector Emitter Saturation Voltage	1.45V
Operating Temperature Max	150°C
IGBT Termination	Stud
IGBT Technology	Trench Field Stop
Product Range	-

Continuous Collector Current	250A
Power Dissipation	612W
Transistor Case Style	Module
Collector Emitter Voltage Max	650V
Transistor Mounting	Panel
SVHC	To Be Advised

GD200HFX65C1S Data Sheet

Country of Origin: Country in which last significant manufacturing process was carried outCountry of Origin:	China Country in which last significant manufacturing process was carried out
Tariff No:	85412900
US ECCN:	EAR99
EU ECCN:	NLR
RoHS Compliant:	Yes RoHS
RoHS Phthalates Compliant:	Yes RoHS
SVHC:	To Be Advised
Download Product Compliance Certificate	Product Compliance Certificate
Weight (kg):	.3