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TP65H035G4YS
Gallium Nitride (GaN) Transistor, 650 V, 46.5 A, 0.041 ohm, 42.7 nC, TO-247, Through Hole
Image is for illustrative purposes only. Please refer to product description.
| Manufacturer | RENESAS |
|---|---|
| Manufacturer Part No | TP65H035G4YSCopy |
| Manufacturer Standard Lead Time | 28 weeks |
| Order Code | 4680953 |
| Product Range | SuperGaN Series |
| Your Part Number | |
| Technical Datasheet |
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| Quantity | Price |
|---|---|
| 1+ | Php930.600 |
| 5+ | Php882.000 |
| 10+ | Php832.500 |
| 50+ | Php801.900 |
| 100+ | Php771.300 |
| 250+ | Php756.000 |
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Php930.60
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Product Information
| Manufacturer | RENESAS |
|---|---|
| Manufacturer Part No | TP65H035G4YSCopy |
| Manufacturer Standard Lead Time | 28 weeks |
| Order Code | 4680953 |
| Product Range | SuperGaN Series |
| Technical Datasheet | |
| Drain Source Voltage Vds | 650V |
| Continuous Drain Current Id | 46.5A |
| Drain Source On State Resistance | 0.041ohm |
| Typical Gate Charge | 42.7nC |
| Transistor Case Style | TO-247 |
| Transistor Mounting | Through Hole |
| No. of Pins | 4Pins |
| Product Range | SuperGaN Series |
| Qualification | - |
| SVHC | No SVHC (25-Jun-2025) |
Product Overview
TP65H035G4YS is a 650V, 35mohm gallium nitride (GaN) FET. It is a normally-off device using Renesas’s Gen IV platform. It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance. The Gen IV SuperGaN® platform uses advanced epi and patented design technologies to simplify manufacturability while improving efficiency over silicon via lower gate charge, output capacitance, crossover loss, and reverse recovery charge. It is ideal for datacom, broad industrial, PV inverter and servo motor applications.
- JEDEC qualified GaN technology
- Dynamic RDS(on)eff production tested
- Robust design featuring a wide gate safety margin and transient over-voltage capability
- Enhanced inrush current capability and reduced crossover loss
- Enables AC-DC bridgeless totem-pole PFC designs
- Achieves increased efficiency in both hard- and soft-switched circuits
- Easy to drive with commonly-used gate drivers
- GSD pin layout improves high speed design
- Available in 4 pin TO-247 package
Technical Specifications
| Drain Source Voltage Vds | 650V |
|---|---|
| Drain Source On State Resistance | 0.041ohm |
| Transistor Case Style | TO-247 |
| No. of Pins | 4Pins |
| Qualification | - |
| Continuous Drain Current Id | 46.5A |
|---|---|
| Typical Gate Charge | 42.7nC |
| Transistor Mounting | Through Hole |
| Product Range | SuperGaN Series |
| SVHC | No SVHC (25-Jun-2025) |
Technical Docs (1)
Legislation and Environmental
| Country of Origin: Country in which last significant manufacturing process was carried outCountry of Origin: | Philippines Country in which last significant manufacturing process was carried out |
|---|---|
| Tariff No: | 85412900 |
| US ECCN: | EAR99 |
| EU ECCN: | NLR |
| RoHS Compliant: | Yes RoHS |
| RoHS Phthalates Compliant: | Yes RoHS |
| SVHC: | No SVHC (25-Jun-2025) |
| Download Product Compliance Certificate | Product Compliance Certificate |
| Weight (kg): | .000001 |