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RJH60F0DPQ-A0#T0
IGBT, 50 A, 1.7 V, 201.6 W, 600 V, TO-247, 3 Pins
Image is for illustrative purposes only. Please refer to product description.
ManufacturerRENESAS
Manufacturer Part NoRJH60F0DPQ-A0#T0
Order Code2135153
Your Part Number
Technical Datasheet
No Longer Stocked
Product Information
ManufacturerRENESAS
Manufacturer Part NoRJH60F0DPQ-A0#T0
Order Code2135153
Technical Datasheet
Continuous Collector Current50A
Collector Emitter Saturation Voltage1.7V
Power Dissipation201.6W
Collector Emitter Voltage Max600V
Transistor Case StyleTO-247
No. of Pins3Pins
Operating Temperature Max150°C
Transistor MountingThrough Hole
Product Range-
Product Overview
The RJH60F0DPQ-A0#T0 is a 600V IGBT with high speed power switching and built in fast recovery diode in one package.
- 150°C Junction temperature
- Low collector to emitter saturation voltage
- Trench gate and thin wafer technology
- High speed switching
Applications
Power Management
Technical Specifications
Continuous Collector Current
50A
Power Dissipation
201.6W
Transistor Case Style
TO-247
Operating Temperature Max
150°C
Product Range
-
Collector Emitter Saturation Voltage
1.7V
Collector Emitter Voltage Max
600V
No. of Pins
3Pins
Transistor Mounting
Through Hole
Technical Docs (3)
Associated Products
4 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Japan
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Japan
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00614