HFA3096BZ
Bipolar Transistor Array, Complementary NPN and PNP, 8 V, 8 V, 37 mA, 37 mA, 150 mW
| Manufacturer | RENESAS |
|---|---|
| Manufacturer Part No | HFA3096BZCopy |
| Manufacturer Standard Lead Time | 28 weeks |
| Order Code | 1562039 |
| Your Part Number | |
| Technical Datasheet |
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| Quantity | Price |
|---|---|
| 1+ | Php760.500 |
| 5+ | Php648.500 |
| 10+ | Php536.000 |
| 50+ | Php494.600 |
| 100+ | Php453.200 |
| 250+ | Php452.700 |
Product Information
| Manufacturer | RENESAS |
|---|---|
| Manufacturer Part No | HFA3096BZCopy |
| Manufacturer Standard Lead Time | 28 weeks |
| Order Code | 1562039 |
| Technical Datasheet | |
| Transistor Polarity | Complementary NPN and PNP |
| Collector Emitter Voltage Max NPN | 8V |
| Collector Emitter Voltage Max PNP | 8V |
| Continuous Collector Current NPN | 37mA |
| Continuous Collector Current PNP | 37mA |
| Power Dissipation NPN | 150mW |
| Power Dissipation PNP | 150mW |
| DC Current Gain hFE Min NPN | 130hFE |
| DC Current Gain hFE Min PNP | 130hFE |
| Transistor Case Style | SOIC |
| No. of Pins | 16Pins |
| Transistor Mounting | Surface Mount |
| Operating Temperature Max | 125°C |
| Transition Frequency NPN | 8GHz |
| Transition Frequency PNP | 5.5GHz |
| Product Range | - |
| Qualification | - |
| MSL | MSL 3 - 168 hours |
| SVHC | No SVHC (25-Jun-2025) |
Product Overview
The HFA3096BZ is a NPN-PNP ultra-high frequency Bipolar Transistor Array consists of five dielectrically isolated transistors on a common monolithic substrate. The NPN transistors exhibit a fT of 8GHz while the PNP transistors provide a fT of 5.5GHz. Both types exhibit low noise (3.5dB), making them ideal for high frequency amplifier and mixer applications. Access is provided to each of the terminals for the individual transistors for maximum application flexibility. Monolithic construction of these transistor arrays provides close electrical and thermal matching of the five transistors.
- 3.5dB Noise figure (50Ω) at 1GHz
- <lt/>1pA Collector to collector leakage
- Complete isolation between transistors
Applications
RF Communications, Sensing & Instrumentation, Industrial, Power Management
Notes
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
| Transistor Polarity | Complementary NPN and PNP |
|---|---|
| Collector Emitter Voltage Max PNP | 8V |
| Continuous Collector Current PNP | 37mA |
| Power Dissipation PNP | 150mW |
| DC Current Gain hFE Min PNP | 130hFE |
| No. of Pins | 16Pins |
| Operating Temperature Max | 125°C |
| Transition Frequency PNP | 5.5GHz |
| Qualification | - |
| SVHC | No SVHC (25-Jun-2025) |
| Collector Emitter Voltage Max NPN | 8V |
|---|---|
| Continuous Collector Current NPN | 37mA |
| Power Dissipation NPN | 150mW |
| DC Current Gain hFE Min NPN | 130hFE |
| Transistor Case Style | SOIC |
| Transistor Mounting | Surface Mount |
| Transition Frequency NPN | 8GHz |
| Product Range | - |
| MSL | MSL 3 - 168 hours |
Technical Docs (2)
Legislation and Environmental
| Country of Origin: Country in which last significant manufacturing process was carried outCountry of Origin: | Philippines Country in which last significant manufacturing process was carried out |
|---|---|
| Tariff No: | 85412100 |
| US ECCN: | EAR99 |
| EU ECCN: | NLR |
| RoHS Compliant: | Yes RoHS |
| RoHS Phthalates Compliant: | Yes RoHS |
| SVHC: | No SVHC (25-Jun-2025) |
| Download Product Compliance Certificate | Product Compliance Certificate |
| Weight (kg): | .00034 |