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NXH50M65L4C2SG
IGBT Module, 50 A, 1.6 V, 150 °C, DIP
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ManufacturerONSEMI
Manufacturer Part NoNXH50M65L4C2SG
Order Code3872101
Your Part Number
Technical Datasheet
6 In Stock
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6 Delivery in 3-4 Business Days(UK stock)
Available until stock is exhausted
| Quantity | Price |
|---|---|
| 1+ | Php5,124.600 |
| 5+ | Php4,842.100 |
| 10+ | Php4,363.200 |
| 50+ | Php4,063.800 |
Price for:Each
Minimum: 1
Multiple: 1
Php5,124.60
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoNXH50M65L4C2SG
Order Code3872101
Technical Datasheet
IGBT Configuration-
Continuous Collector Current50A
Collector Emitter Saturation Voltage1.6V
Power Dissipation-
Operating Temperature Max150°C
Transistor Case StyleDIP
IGBT TerminationSolder
Collector Emitter Voltage Max650V
IGBT Technology-
Transistor MountingPanel
Product Range-
SVHCNo SVHC (15-Jan-2018)
Technical Specifications
IGBT Configuration
-
Collector Emitter Saturation Voltage
1.6V
Operating Temperature Max
150°C
IGBT Termination
Solder
IGBT Technology
-
Product Range
-
Continuous Collector Current
50A
Power Dissipation
-
Transistor Case Style
DIP
Collector Emitter Voltage Max
650V
Transistor Mounting
Panel
SVHC
No SVHC (15-Jan-2018)
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (15-Jan-2018)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0001