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NXH200B100H4F2SG

IGBT Module, PIM, 100 A, 1.8 V, 93 W, 150 °C, Module

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Manufacturer	ONSEMI
Manufacturer Part No	NXH200B100H4F2SGCopy
Manufacturer Standard Lead Time	14 weeks
Order Code	3929803
Product Range	EliteSiC Series
Your Part Number
Technical Datasheet	Data Sheet See all Technical Docs

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Php9,106.70

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Manufacturer	ONSEMI
Manufacturer Part No	NXH200B100H4F2SGCopy
Manufacturer Standard Lead Time	14 weeks
Order Code	3929803
Product Range	EliteSiC Series
Technical Datasheet	Data Sheet
IGBT Configuration	PIM
Continuous Collector Current	100A
Collector Emitter Saturation Voltage	1.8V
Power Dissipation	93W
Operating Temperature Max	150°C
Transistor Case Style	Module
IGBT Termination	Solder Pin
Collector Emitter Voltage Max	1kV
IGBT Technology	IGBT 6 [Trench/Field Stop]
Transistor Mounting	Panel
Product Range	EliteSiC Series
SVHC	No SVHC (04-Feb-2026)

IGBT Configuration	PIM
Collector Emitter Saturation Voltage	1.8V
Operating Temperature Max	150°C
IGBT Termination	Solder Pin
IGBT Technology	IGBT 6 [Trench/Field Stop]
Product Range	EliteSiC Series

Continuous Collector Current	100A
Power Dissipation	93W
Transistor Case Style	Module
Collector Emitter Voltage Max	1kV
Transistor Mounting	Panel
SVHC	No SVHC (04-Feb-2026)

NXH200B100H4F2SG Data Sheet

Product Change Notice EN

Country of Origin: Country in which last significant manufacturing process was carried outCountry of Origin:	Malaysia Country in which last significant manufacturing process was carried out
Tariff No:	85412900
US ECCN:	EAR99
EU ECCN:	NLR
RoHS Compliant:	Yes RoHS
RoHS Phthalates Compliant:	Yes RoHS
SVHC:	No SVHC (04-Feb-2026)
Download Product Compliance Certificate	Product Compliance Certificate
Weight (kg):	.04173