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NVHL040N120SC1
Silicon Carbide MOSFET, EliteSiC, Single, N Channel, 60 A, 1.2 kV, 0.056 ohm, TO-247
Image is for illustrative purposes only. Please refer to product description.
| Manufacturer | ONSEMI |
|---|---|
| Manufacturer Part No | NVHL040N120SC1Copy |
| Manufacturer Standard Lead Time | 12 weeks |
| Order Code | 3464026 |
| Product Range | EliteSiC Series |
| Your Part Number | |
| Technical Datasheet |
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| Quantity | Price |
|---|---|
| 1+ | Php1,686.200 |
| 5+ | Php1,387.800 |
| 10+ | Php1,089.500 |
| 50+ | Php1,067.900 |
| 100+ | Php1,046.300 |
| 250+ | Php1,024.200 |
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Product Information
| Manufacturer | ONSEMI |
|---|---|
| Manufacturer Part No | NVHL040N120SC1Copy |
| Manufacturer Standard Lead Time | 12 weeks |
| Order Code | 3464026 |
| Product Range | EliteSiC Series |
| Technical Datasheet | |
| MOSFET Module Configuration | Single |
| Channel Type | N Channel |
| Continuous Drain Current Id | 60A |
| Drain Source Voltage Vds | 1.2kV |
| Drain Source On State Resistance | 0.056ohm |
| Transistor Case Style | TO-247 |
| No. of Pins | 3Pins |
| Rds(on) Test Voltage | 20V |
| Gate Source Threshold Voltage Max | 4.3V |
| Power Dissipation | 348W |
| Operating Temperature Max | 175°C |
| Product Range | EliteSiC Series |
| SVHC | Lead (25-Jun-2025) |
Product Overview
- Silicon carbide (SiC) MOSFET
- 100% UIL tested, AEC-Q101 qualified and PPAP capable
- Drain-to-source on resistance is 39mohm (typ, VGS = 20V, ID = 35A, TJ = 25°C
- Reverse transfer capacitance is 12pF (typ, VGS = 0V, f = 1MHz, VDS = 800V)
- Continuous drain current RJC is 60A (maximum, TC = 25°C, steady state)
- Gate to source leakage current is ±1µA (max, VGS = +25/-15V, VDS =0V)
- Power dissipation is 348W (VGS = +25/-15V, VDS =0V)
- Rise time is 41ns (typ, VGS = -5/20V, VDS = 800V, ID = 47A, RG = 4.7ohm, inductive load)
- Reverse recovery time is 24ns (typ, VGS = -5/20V, ISD = 47A, dIS/dt = 1000A/ s)
- Operating and storage junction temperature range from -55 to +175°C, TO247-3L package
Technical Specifications
| MOSFET Module Configuration | Single |
|---|---|
| Continuous Drain Current Id | 60A |
| Drain Source On State Resistance | 0.056ohm |
| No. of Pins | 3Pins |
| Gate Source Threshold Voltage Max | 4.3V |
| Operating Temperature Max | 175°C |
| SVHC | Lead (25-Jun-2025) |
| Channel Type | N Channel |
|---|---|
| Drain Source Voltage Vds | 1.2kV |
| Transistor Case Style | TO-247 |
| Rds(on) Test Voltage | 20V |
| Power Dissipation | 348W |
| Product Range | EliteSiC Series |
Technical Docs (2)
Legislation and Environmental
| Country of Origin: Country in which last significant manufacturing process was carried outCountry of Origin: | China Country in which last significant manufacturing process was carried out |
|---|---|
| Tariff No: | 85412900 |
| US ECCN: | EAR99 |
| EU ECCN: | NLR |
| RoHS Compliant: | Y-Ex RoHS |
| RoHS Phthalates Compliant: | Yes RoHS |
| SVHC: | Lead (25-Jun-2025) |
| Download Product Compliance Certificate | Product Compliance Certificate |
| Weight (kg): | .007097 |