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NTF2955T1G
Power MOSFET, P Channel, 60 V, 2.6 A, 0.17 ohm, SOT-223, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
| Manufacturer | ONSEMI |
|---|---|
| Manufacturer Part No | NTF2955T1GCopy |
| Manufacturer Standard Lead Time | 22 weeks |
| Order Code | Full Reel2317882 Re-Reel1453649RL Cut Tape1453649 |
| Your Part Number | |
| Technical Datasheet |
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Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | Php119.300 | Php119.30 |
| Total Price | Php119.30 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | Php119.300 |
| 10+ | Php57.200 |
| 50+ | Php47.700 |
| 200+ | Php43.900 |
| 500+ | Php40.000 |
Full Reel
| Quantity | Price |
|---|---|
| 1000+ | Php35.800 |
| 3000+ | Php35.100 |
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
| Manufacturer | ONSEMI |
|---|---|
| Manufacturer Part No | NTF2955T1GCopy |
| Manufacturer Standard Lead Time | 22 weeks |
| Order Code | Full Reel2317882 Re-Reel1453649RL Cut Tape1453649 |
| Technical Datasheet | |
| Channel Type | P Channel |
| Drain Source Voltage Vds | 60V |
| Continuous Drain Current Id | 2.6A |
| Drain Source On State Resistance | 0.17ohm |
| Transistor Case Style | SOT-223 |
| Transistor Mounting | Surface Mount |
| Rds(on) Test Voltage | 20V |
| Gate Source Threshold Voltage Max | 4V |
| Power Dissipation | 1W |
| No. of Pins | 4Pins |
| Operating Temperature Max | 175°C |
| Product Range | - |
| Qualification | - |
| MSL | - |
| SVHC | No SVHC (25-Jun-2025) |
Product Overview
NTF2955T1G is a single, P-channel power MOSFET. The applications include power supplies, PWM motor control, converters, and power management.
- Drain-to-source on resistance is 145mohm typ (VGS = -10V, ID = -0.75A)
- Gate-to-source voltage is ±20V (TJ = 25°C)
- Continuous drain current is -2.6A (TJ = 25°C, steady state)
- Power dissipation is 2.3W (TJ = 25°C, steady state)
- Pulsed drain current is -17A (tp = 10µs, TJ = 25°C)
- Drain-to-source breakdown voltage is -60V min (VGS = 0V, ID = -250µA, TJ=25°C)
- Gate threshold voltage range from -2.0 to -4.0V (VGS = VDS, ID = -1.0mA, TJ=25°C)
- Forward transconductance is 1.77S typ (VGS = -15V, ID = -0.75A, TJ=25°C)
- Turn-on delay time is 11ns rtp (VGS = 10V, VDD = 25V, ID = 1.5A, RG = 9.1ohm, RL = 25ohm)
- SOT-223 package, operating junction range from -55 to 175°C
Technical Specifications
| Channel Type | P Channel |
|---|---|
| Continuous Drain Current Id | 2.6A |
| Transistor Case Style | SOT-223 |
| Rds(on) Test Voltage | 20V |
| Power Dissipation | 1W |
| Operating Temperature Max | 175°C |
| Qualification | - |
| SVHC | No SVHC (25-Jun-2025) |
| Drain Source Voltage Vds | 60V |
|---|---|
| Drain Source On State Resistance | 0.17ohm |
| Transistor Mounting | Surface Mount |
| Gate Source Threshold Voltage Max | 4V |
| No. of Pins | 4Pins |
| Product Range | - |
| MSL | - |
Technical Docs (3)
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Legislation and Environmental
| Country of Origin: Country in which last significant manufacturing process was carried outCountry of Origin: | Malaysia Country in which last significant manufacturing process was carried out |
|---|---|
| Tariff No: | 85412900 |
| US ECCN: | EAR99 |
| EU ECCN: | NLR |
| RoHS Compliant: | Y-Ex RoHS |
| RoHS Phthalates Compliant: | Yes RoHS |
| SVHC: | No SVHC (25-Jun-2025) |
| Download Product Compliance Certificate | Product Compliance Certificate |
| Weight (kg): | .000124 |