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NDS9948
Dual MOSFET, P Channel, 60 V, 2.3 A
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoNDS9948Copy
Order Code
Re-Reel1700705RL
Cut Tape1700705
Your Part Number
2,859 In Stock
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Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 5 | Php41.400 | Php207.00 |
| Total Price | Php207.00 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 5+ | Php41.400 |
| 50+ | Php35.200 |
| 100+ | Php29.000 |
| 500+ | Php22.000 |
| 1000+ | Php20.000 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoNDS9948Copy
Order Code
Re-Reel1700705RL
Cut Tape1700705
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds N Channel-
Drain Source Voltage Vds P Channel60V
Continuous Drain Current Id N Channel-
Continuous Drain Current Id P Channel2.3A
Drain Source On State Resistance N Channel-
Drain Source On State Resistance P Channel0.25ohm
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel-
Power Dissipation P Channel2W
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The NDS9948 is a dual P-channel MOSFET produced using PowerTrench® process. It has been optimized for applications requiring a wide range of gate drive voltage ratings (4.5 to 20V). The device is suitable for use with load switch and battery protection applications.
- Low gate charge
- Fast switching speed
- High performance Trench technology for extremely low RDS (ON)
- High power and current handling capability
- ±20V Gate to source voltage
- 2A Continuous drain current
- 1.6A Pulsed drain current
Applications
Industrial, Power Management
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds P Channel
60V
Continuous Drain Current Id P Channel
2.3A
Drain Source On State Resistance P Channel
0.25ohm
No. of Pins
8Pins
Power Dissipation P Channel
2W
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
-
Continuous Drain Current Id N Channel
-
Drain Source On State Resistance N Channel
-
Transistor Case Style
SOIC
Power Dissipation N Channel
-
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00011