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NDS0610
Power MOSFET, P Channel, 60 V, 120 mA, 10 ohm, SOT-23, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
| Manufacturer | ONSEMI |
|---|---|
| Manufacturer Part No | NDS0610Copy |
| Manufacturer Standard Lead Time | 22 weeks |
| Order Code | Full Reel2438361 Re-Reel9846360RL Cut Tape9846360 |
| Your Part Number | |
| Technical Datasheet |
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Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 5 | Php16.500 | Php82.50 |
| Total Price | Php82.50 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 5+ | Php16.500 |
| 50+ | Php15.500 |
| 100+ | Php14.400 |
| 500+ | Php10.900 |
| 1500+ | Php10.700 |
Full Reel
| Quantity | Price |
|---|---|
| 3000+ | Php10.700 |
| 9000+ | Php10.500 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
| Manufacturer | ONSEMI |
|---|---|
| Manufacturer Part No | NDS0610Copy |
| Manufacturer Standard Lead Time | 22 weeks |
| Order Code | Full Reel2438361 Re-Reel9846360RL Cut Tape9846360 |
| Technical Datasheet | |
| Channel Type | P Channel |
| Drain Source Voltage Vds | 60V |
| Continuous Drain Current Id | 120mA |
| Drain Source On State Resistance | 10ohm |
| Transistor Case Style | SOT-23 |
| Transistor Mounting | Surface Mount |
| Rds(on) Test Voltage | 10V |
| Gate Source Threshold Voltage Max | 1.7V |
| Power Dissipation | 300mW |
| No. of Pins | 3Pins |
| Operating Temperature Max | 150°C |
| Product Range | - |
| Qualification | - |
| MSL | MSL 1 - Unlimited |
| SVHC | No SVHC (25-Jun-2025) |
Product Overview
The NDS0610 is a P-channel enhancement-mode FET produced using high cell density DMOS technology. This very high density process has been designed to minimize ON-state resistance, provide rugged and reliable performance and fast switching. They can be used, with a minimum of effort, in most applications requiring up to 120mA DC and can deliver current up to 1A. This product is particularly suited to low voltage applications requiring a low current high side switch.
- Voltage controlled p-channel small signal switch
- High density cell design for low RDS (ON)
- High saturation current
Technical Specifications
| Channel Type | P Channel |
|---|---|
| Continuous Drain Current Id | 120mA |
| Transistor Case Style | SOT-23 |
| Rds(on) Test Voltage | 10V |
| Power Dissipation | 300mW |
| Operating Temperature Max | 150°C |
| Qualification | - |
| SVHC | No SVHC (25-Jun-2025) |
| Drain Source Voltage Vds | 60V |
|---|---|
| Drain Source On State Resistance | 10ohm |
| Transistor Mounting | Surface Mount |
| Gate Source Threshold Voltage Max | 1.7V |
| No. of Pins | 3Pins |
| Product Range | - |
| MSL | MSL 1 - Unlimited |
Technical Docs (2)
Alternatives for NDS0610
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Associated Products
3 Products Found
Legislation and Environmental
| Country of Origin: Country in which last significant manufacturing process was carried outCountry of Origin: | China Country in which last significant manufacturing process was carried out |
|---|---|
| Tariff No: | 85412900 |
| US ECCN: | EAR99 |
| EU ECCN: | NLR |
| RoHS Compliant: | Yes RoHS |
| RoHS Phthalates Compliant: | Yes RoHS |
| SVHC: | No SVHC (25-Jun-2025) |
| Download Product Compliance Certificate | Product Compliance Certificate |
| Weight (kg): | .000033 |