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MMBF170
Power MOSFET, N Channel, 60 V, 500 mA, 5 ohm, SOT-23, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
| Manufacturer | ONSEMI |
|---|---|
| Manufacturer Part No | MMBF170Copy |
| Manufacturer Standard Lead Time | 22 weeks |
| Order Code | Full Reel2438269 Re-Reel9845399RL Cut Tape9845399 |
| Your Part Number | |
| Technical Datasheet |
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Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 5 | Php9.400 | Php47.00 |
| Total Price | Php47.00 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 5+ | Php9.400 |
| 50+ | Php8.800 |
| 100+ | Php8.200 |
| 500+ | Php6.100 |
| 1500+ | Php6.000 |
Full Reel
| Quantity | Price |
|---|---|
| 3000+ | Php4.400 |
| 9000+ | Php4.400 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
| Manufacturer | ONSEMI |
|---|---|
| Manufacturer Part No | MMBF170Copy |
| Manufacturer Standard Lead Time | 22 weeks |
| Order Code | Full Reel2438269 Re-Reel9845399RL Cut Tape9845399 |
| Technical Datasheet | |
| Channel Type | N Channel |
| Drain Source Voltage Vds | 60V |
| Continuous Drain Current Id | 500mA |
| Drain Source On State Resistance | 5ohm |
| Transistor Case Style | SOT-23 |
| Transistor Mounting | Surface Mount |
| Rds(on) Test Voltage | 10V |
| Gate Source Threshold Voltage Max | 2.1V |
| Power Dissipation | 300mW |
| No. of Pins | 3Pins |
| Operating Temperature Max | 150°C |
| Product Range | - |
| Qualification | - |
| MSL | MSL 1 - Unlimited |
| SVHC | No SVHC (25-Jun-2025) |
Product Overview
The MMBF170 is a surface mount, N channel enhancement mode field effect transistors in SOT-23 package. This device features high cell density, DMOS technology which has been especially tailored to minimize the onstate resistance and provide superior switching performance and high avalanche energy strength. This device is suitable for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers and other switching applications.
- High density cell design for low Rds(ON)
- Voltage controlled small signal switch
- Rugged and reliable
- High saturation current capability
- Drain to source voltage (Vds) of 60V
- Gate to source voltage of ±20V
- Continuous drain current (Id) of 500mA
- Power dissipation (Pd) of 300mW
- Low on state resistance of 1.2ohm at Vgs 10V
- Operating temperature range -55°C to 150°C
Technical Specifications
| Channel Type | N Channel |
|---|---|
| Continuous Drain Current Id | 500mA |
| Transistor Case Style | SOT-23 |
| Rds(on) Test Voltage | 10V |
| Power Dissipation | 300mW |
| Operating Temperature Max | 150°C |
| Qualification | - |
| SVHC | No SVHC (25-Jun-2025) |
| Drain Source Voltage Vds | 60V |
|---|---|
| Drain Source On State Resistance | 5ohm |
| Transistor Mounting | Surface Mount |
| Gate Source Threshold Voltage Max | 2.1V |
| No. of Pins | 3Pins |
| Product Range | - |
| MSL | MSL 1 - Unlimited |
Technical Docs (2)
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Legislation and Environmental
| Country of Origin: Country in which last significant manufacturing process was carried outCountry of Origin: | China Country in which last significant manufacturing process was carried out |
|---|---|
| Tariff No: | 85412900 |
| US ECCN: | EAR99 |
| EU ECCN: | NLR |
| RoHS Compliant: | Yes RoHS |
| RoHS Phthalates Compliant: | Yes RoHS |
| SVHC: | No SVHC (25-Jun-2025) |
| Download Product Compliance Certificate | Product Compliance Certificate |
| Weight (kg): | .000037 |