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FDN337N
Power MOSFET, N Channel, 30 V, 2.2 A, 0.065 ohm, SuperSOT, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
| Manufacturer | ONSEMI |
|---|---|
| Manufacturer Part No | FDN337NCopy |
| Manufacturer Standard Lead Time | 16 weeks |
| Order Code | Full Reel2323185 Re-Reel9845356RL Cut Tape9845356 |
| Your Part Number | |
| Technical Datasheet |
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Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 5 | Php25.600 | Php128.00 |
| Total Price | Php128.00 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 5+ | Php25.600 |
| 50+ | Php24.100 |
| 100+ | Php22.600 |
| 500+ | Php17.300 |
| 1500+ | Php17.000 |
Full Reel
| Quantity | Price |
|---|---|
| 3000+ | Php14.000 |
| 9000+ | Php13.800 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
| Manufacturer | ONSEMI |
|---|---|
| Manufacturer Part No | FDN337NCopy |
| Manufacturer Standard Lead Time | 16 weeks |
| Order Code | Full Reel2323185 Re-Reel9845356RL Cut Tape9845356 |
| Technical Datasheet | |
| Channel Type | N Channel |
| Drain Source Voltage Vds | 30V |
| Continuous Drain Current Id | 2.2A |
| Drain Source On State Resistance | 0.065ohm |
| Transistor Case Style | SuperSOT |
| Transistor Mounting | Surface Mount |
| Rds(on) Test Voltage | 4.5V |
| Gate Source Threshold Voltage Max | 700mV |
| Power Dissipation | 500mW |
| No. of Pins | 3Pins |
| Operating Temperature Max | 150°C |
| Product Range | - |
| Qualification | - |
| MSL | MSL 1 - Unlimited |
| SVHC | No SVHC (04-Feb-2026) |
Product Overview
The FDN337N is N channel logic level enhancement mode power field effect transistor in superSOT-3 package. This transistor is produced using high cell density, DMOS technology, very high density process is especially tailored to minimize on state resistance, thus suite for low voltage applications in notebook computers, portable phones, PCMCIA cards and other battery powered circuits where fast switching and low inline power loss are needed in a very small outline surface mount package.
- High density cell design for extremely low Rds(on)
- Exceptional on resistance and maximum DC current capability
- Drain to source voltage (Vds) of 30V
- Gate to source voltage of ±8V
- Low on state resistance of 65mohm at Vgs 4.5V
- Continuous drain current of 2.2A
- Maximum power dissipation of 500mW
- Operating junction temperature range from -55°C to 150°C
Technical Specifications
| Channel Type | N Channel |
|---|---|
| Continuous Drain Current Id | 2.2A |
| Transistor Case Style | SuperSOT |
| Rds(on) Test Voltage | 4.5V |
| Power Dissipation | 500mW |
| Operating Temperature Max | 150°C |
| Qualification | - |
| SVHC | No SVHC (04-Feb-2026) |
| Drain Source Voltage Vds | 30V |
|---|---|
| Drain Source On State Resistance | 0.065ohm |
| Transistor Mounting | Surface Mount |
| Gate Source Threshold Voltage Max | 700mV |
| No. of Pins | 3Pins |
| Product Range | - |
| MSL | MSL 1 - Unlimited |
Technical Docs (2)
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Legislation and Environmental
| Country of Origin: Country in which last significant manufacturing process was carried outCountry of Origin: | Philippines Country in which last significant manufacturing process was carried out |
|---|---|
| Tariff No: | 85412900 |
| US ECCN: | EAR99 |
| EU ECCN: | NLR |
| RoHS Compliant: | Yes RoHS |
| RoHS Phthalates Compliant: | Yes RoHS |
| SVHC: | No SVHC (04-Feb-2026) |
| Download Product Compliance Certificate | Product Compliance Certificate |
| Weight (kg): | .000033 |