Print Page
BC858AWT1G
Bipolar (BJT) Single Transistor, PNP, 30 V, 100 mA, 150 mW, SOT-323, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoBC858AWT1G
Order Code2724351RL
Your Part Number
Technical Datasheet
Product Information
ManufacturerONSEMI
Manufacturer Part NoBC858AWT1G
Order Code2724351RL
Technical Datasheet
Transistor PolarityPNP
Collector Emitter Voltage Max30V
Continuous Collector Current100mA
Power Dissipation150mW
Transistor Case StyleSOT-323
Transistor MountingSurface Mount
No. of Pins3Pins
Transition Frequency100MHz
DC Current Gain hFE Min125hFE
Operating Temperature Max150°C
Product Range-
QualificationAEC-Q101
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
Transistor Polarity
PNP
Continuous Collector Current
100mA
Transistor Case Style
SOT-323
No. of Pins
3Pins
DC Current Gain hFE Min
125hFE
Product Range
-
MSL
MSL 1 - Unlimited
Collector Emitter Voltage Max
30V
Power Dissipation
150mW
Transistor Mounting
Surface Mount
Transition Frequency
100MHz
Operating Temperature Max
150°C
Qualification
AEC-Q101
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
Alternatives for BC858AWT1G
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00001