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NVD5117PLT4G-VF01
Power MOSFET, P Channel, 60 V, 61 A, 0.012 ohm, TO-252 (DPAK), Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoNVD5117PLT4G-VF01
Order Code3368857
Your Part Number
Technical Datasheet
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| Quantity | Price |
|---|---|
| 1+ | Php242.000 |
| 10+ | Php153.000 |
| 100+ | Php111.400 |
| 500+ | Php98.200 |
| 1000+ | Php94.100 |
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Php242.00
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNVD5117PLT4G-VF01
Order Code3368857
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id61A
Drain Source On State Resistance0.012ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.5V
Power Dissipation118W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
QualificationAEC-Q101
SVHCLead (25-Jun-2025)
Product Overview
NVD5117PLT4G-VF01 is a single, P-channel, power MOSFET.
- Low RDS(on) to minimize conduction losses
- High current capability, avalanche energy specified
- AEC-Q101 qualified
- Continuous drain current is -61A at (TC = 25°C)
- Drain-to-source breakdown voltage is -60V minimum at (VGS = 0V, ID = -250µA)
- Gate-to-source leakage current is 100nA maximum at (VDS = 0V, VGS = 20V)
- Drain-to-source on resistance is 12mohm typical at (VGS = -10V, ID = -29A)
- Turn-on delay time is 22ns typical at (VGS = -4.5V, VDS = -48V, ID = -29A, RG = 2.5 ohm)
- Rise time is 195ns typical at (VGS = -4.5V, VDS = -48V, ID = -29A, RG = 2.5 ohm)
- Junction temperature range from -55°C to 175°C, DPAK package
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
61A
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
118W
Operating Temperature Max
175°C
Qualification
AEC-Q101
SVHC
Lead (25-Jun-2025)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.012ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.5V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Vietnam
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Vietnam
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0004