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FQD8P10TM-F085
Power MOSFET, P Channel, 100 V, 6.6 A, 0.53 ohm, TO-252 (DPAK), Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoFQD8P10TM-F085
Order Code3368810
Your Part Number
Technical Datasheet
1,214 In Stock
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| Quantity | Price |
|---|---|
| 5+ | Php61.200 |
| 50+ | Php53.900 |
| 100+ | Php46.600 |
| 500+ | Php36.300 |
| 1000+ | Php34.800 |
Price for:Each (Supplied on Cut Tape)
Minimum: 5
Multiple: 5
Php306.00
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFQD8P10TM-F085
Order Code3368810
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id6.6A
Drain Source On State Resistance0.53ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation44W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
QualificationAEC-Q101
SVHCLead (25-Jun-2025)
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
6.6A
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
44W
Operating Temperature Max
150°C
Qualification
AEC-Q101
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.53ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
SVHC
Lead (25-Jun-2025)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0004