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FDS6898A.
Dual MOSFET, N Channel, 20 V, 9.4 A, 0.014 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoFDS6898A.
Order Code
Re-Reel1471056RL
Cut Tape1471056
Your Part Number
1,467 In Stock
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1467 Delivery in 3-4 Business Days(UK stock)
Packaging Options
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 5+ | Php73.100 |
| 50+ | Php60.700 |
| 100+ | Php48.400 |
| 500+ | Php38.000 |
| 1000+ | Php34.700 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoFDS6898A.
Order Code
Re-Reel1471056RL
Cut Tape1471056
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds N Channel20V
Drain Source Voltage Vds P Channel-
Continuous Drain Current Id N Channel9.4A
Continuous Drain Current Id P Channel-
Drain Source On State Resistance N Channel0.014ohm
Drain Source On State Resistance P Channel-
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel2W
Power Dissipation P Channel-
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The FDS6898A is a dual N-channel logic level PWM optimized MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain superior switching performance. This device is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
- Low gate charge
- High performance Trench technology for extremely low RDS (ON)
- High power and current handling capability
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds P Channel
-
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance P Channel
-
No. of Pins
8Pins
Power Dissipation P Channel
-
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
20V
Continuous Drain Current Id N Channel
9.4A
Drain Source On State Resistance N Channel
0.014ohm
Transistor Case Style
SOIC
Power Dissipation N Channel
2W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000217