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FDN360P
Power MOSFET, P Channel, 30 V, 2 A, 0.08 ohm, SOT-23, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
| Manufacturer | ONSEMI |
|---|---|
| Manufacturer Part No | FDN360PCopy |
| Manufacturer Standard Lead Time | 19 weeks |
| Order Code | Full Reel2438448 Re-Reel9846336RL Cut Tape9846336 |
| Product Range | PowerTrench® MOSFET |
| Your Part Number | |
| Technical Datasheet |
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Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 5 | Php19.600 | Php98.00 |
| Total Price | Php98.00 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 5+ | Php19.600 |
| 50+ | Php18.400 |
| 100+ | Php17.200 |
| 500+ | Php13.000 |
| 1500+ | Php12.800 |
Full Reel
| Quantity | Price |
|---|---|
| 3000+ | Php9.700 |
| 9000+ | Php9.500 |
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
| Manufacturer | ONSEMI |
|---|---|
| Manufacturer Part No | FDN360PCopy |
| Manufacturer Standard Lead Time | 19 weeks |
| Order Code | Full Reel2438448 Re-Reel9846336RL Cut Tape9846336 |
| Product Range | PowerTrench® MOSFET |
| Technical Datasheet | |
| Channel Type | P Channel |
| Drain Source Voltage Vds | 30V |
| Continuous Drain Current Id | 2A |
| Drain Source On State Resistance | 0.08ohm |
| Transistor Case Style | SOT-23 |
| Transistor Mounting | Surface Mount |
| Rds(on) Test Voltage | 10V |
| Gate Source Threshold Voltage Max | 1.9V |
| Power Dissipation | 500mW |
| No. of Pins | 3Pins |
| Operating Temperature Max | 150°C |
| Product Range | PowerTrench® MOSFET |
| Qualification | - |
| MSL | MSL 1 - Unlimited |
| SVHC | No SVHC (04-Feb-2026) |
Product Overview
The FDN360P is a surface mount, single P channel PowerTrench MOSFET in superSOT-23 package. PowerTrench process has been tailored to minimize the onstate resistance and maintain low gate charge for superior switching performance. This device is well suited for low voltage and battery powered applications.
- High performance trench technology for extremely low Rds(ON)
- Low gate charge typically 6.2nC
- Drain to source voltage (Vds) of -30V
- Gate to source voltage of ±20V
- Continuous drain current (Id) of -2A at 25°C
- Power dissipation (Pd) of 500mW
- Low on state resistance of 100mohm at Vgs -4.5V
- Operating temperature range from -55°C to 150°C
Technical Specifications
| Channel Type | P Channel |
|---|---|
| Continuous Drain Current Id | 2A |
| Transistor Case Style | SOT-23 |
| Rds(on) Test Voltage | 10V |
| Power Dissipation | 500mW |
| Operating Temperature Max | 150°C |
| Qualification | - |
| SVHC | No SVHC (04-Feb-2026) |
| Drain Source Voltage Vds | 30V |
|---|---|
| Drain Source On State Resistance | 0.08ohm |
| Transistor Mounting | Surface Mount |
| Gate Source Threshold Voltage Max | 1.9V |
| No. of Pins | 3Pins |
| Product Range | PowerTrench® MOSFET |
| MSL | MSL 1 - Unlimited |
Technical Docs (2)
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Legislation and Environmental
| Country of Origin: Country in which last significant manufacturing process was carried outCountry of Origin: | Philippines Country in which last significant manufacturing process was carried out |
|---|---|
| Tariff No: | 85412900 |
| US ECCN: | EAR99 |
| EU ECCN: | NLR |
| RoHS Compliant: | Yes RoHS |
| RoHS Phthalates Compliant: | Yes RoHS |
| SVHC: | No SVHC (04-Feb-2026) |
| Download Product Compliance Certificate | Product Compliance Certificate |
| Weight (kg): | .000454 |