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4N35S-M
Optocoupler, Transistor Output, 1 Channel, Surface Mount DIP, 6 Pins, 60 mA, 7.5 kV, 100 %
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9,090 In Stock
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| Quantity | Price |
|---|---|
| 1+ | Php45.400 |
| 10+ | Php25.100 |
| 25+ | Php22.600 |
| 50+ | Php20.200 |
| 100+ | Php17.700 |
| 500+ | Php17.400 |
Price for:Each
Minimum: 1
Multiple: 1
Php45.40
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part No4N35S-M
Order Code1021179
Technical Datasheet
No. of Channels1 Channel
Optocoupler Case StyleSurface Mount DIP
No. of Pins6Pins
Forward Current If Max60mA
Isolation Voltage7.5kV
CTR Min100%
Collector Emitter Voltage V(br)ceo30V
Product Range-
SVHCNo SVHC (19-Jan-2021)
Product Overview
The 4N35S-M is a 6-pin general purpose Phototransistor Optocoupler consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor. It is suitable for digital logic inputs and microprocessor inputs.
- 850V Maximum working insulation voltage
- 6000V Highest allowable over-voltage
- -40 to +100°C Operating temperature range
Applications
Power Management, Industrial
Technical Specifications
No. of Channels
1 Channel
No. of Pins
6Pins
Isolation Voltage
7.5kV
Collector Emitter Voltage V(br)ceo
30V
SVHC
No SVHC (19-Jan-2021)
Optocoupler Case Style
Surface Mount DIP
Forward Current If Max
60mA
CTR Min
100%
Product Range
-
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85414900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (19-Jan-2021)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.001123