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BUK9K18-40E,115
Dual MOSFET, N Channel
Image is for illustrative purposes only. Please refer to product description.
ManufacturerNEXPERIA
Manufacturer Part NoBUK9K18-40E,115
Order Code2215816
Your Part Number
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 15 week(s)
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| Quantity | Price |
|---|---|
| 1+ | Php108.700 |
| 10+ | Php71.700 |
| 100+ | Php47.500 |
| 500+ | Php41.300 |
| 1000+ | Php38.100 |
| 5000+ | Php34.900 |
Price for:Each
Minimum: 1
Multiple: 1
Php108.70
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerNEXPERIA
Manufacturer Part NoBUK9K18-40E,115
Order Code2215816
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id30A
Drain Source On State Resistance0.0135ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.7V
Transistor Case StyleSOT-1205
No. of Pins8Pins
Power Dissipation38W
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCLead (25-Jun-2025)
Product Overview
BUK9K18-40E,115 is a dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified for the AEC Q101 standard for use in high-performance automotive applications. Typical applications include 12V automotive systems, motors, lamps and solenoid control, transmission control, ultra-high performance power switching.
- Dual MOSFET, Q101 compliant
- Repetitive avalanche rated
- Suitable for thermally demanding environments due to 175°C rating
- True logic level gate with VGS(th) rating of greater than 0.5V at 175°C
- Drain-source breakdown voltage is 36V min at ID = 250µA; VGS = 0 V; Tj= -55°C
- Drain-source on-state resistance is 17.1mohm typ at VGS = 5V; ID = 10A; Tj = 25°C
- Gate-drain charge is 3nC typical at ID = 10A; VDS = 32V; VGS = 10V;Tj = 25°C
- Rise time is 4.6ns typ at VDS = 32V, RL = 3.3ohm; VGS = 10V;RG(ext) = 5ohm; Tj = 25°C
- Fall time is 9.9ns typ at VDS = 32V, RL = 3.3ohm; VGS = 10V;RG(ext) = 5ohm; Tj = 25°C
- Source-drain voltage is 0.78V typ at IS = 10A; VGS = 0V; Tj = 25°C
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
30A
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.7V
No. of Pins
8Pins
Operating Temperature Max
175°C
Qualification
-
SVHC
Lead (25-Jun-2025)
Drain Source Voltage Vds
40V
Drain Source On State Resistance
0.0135ohm
Rds(on) Test Voltage
10V
Transistor Case Style
SOT-1205
Power Dissipation
38W
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (3)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000098