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IXFH15N100
Power MOSFET, N Channel, 1 kV, 15 A, 0.7 ohm, TO-247, Through Hole
Image is for illustrative purposes only. Please refer to product description.
No Longer Manufactured
Product Information
ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXFH15N100Copy
Order Code9359583
Technical Datasheet
Channel TypeN Channel
Continuous Drain Current Id15A
Drain Source On State Resistance0.7ohm
Transistor Case StyleTO-247
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4.5V
Power Dissipation360W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Product Overview
The IXFH15N100 is a HiPerFET™ N-channel enhancement-mode Power MOSFET features low package inductance easy to drive and to protect and fast intrinsic rectifier.
- Unclamped inductive switching (UIS) rated
- International standard package
- Rugged polysilicon gate cell structure
- Low RDS (ON)
- High dV/dt and low trr
- Easy to mount
- High power density
Applications
Power Management, Industrial, Motor Drive & Control
Technical Specifications
Channel Type
N Channel
Drain Source On State Resistance
0.7ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4.5V
No. of Pins
3Pins
Product Range
-
Continuous Drain Current Id
15A
Transistor Case Style
TO-247
Rds(on) Test Voltage
10V
Power Dissipation
360W
Operating Temperature Max
150°C
Qualification
-
Technical Docs (2)
Associated Products
4 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.006