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IRF6609TR1PBF
MOSFET, N, DIRECTFET, 20V, MT
Image is for illustrative purposes only. Please refer to product description.
No Longer Stocked
Product Information
ManufacturerINFINEON
Manufacturer Part NoIRF6609TR1PBFCopy
Order Code1436905
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id31A
Drain Source On State Resistance2000µohm
Transistor Case StyleDirectFET MT
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.55V
Power Dissipation1.8W
No. of Pins5Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Alternatives for IRF6609TR1PBF
1 Product Found
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
31A
Transistor Case Style
DirectFET MT
Rds(on) Test Voltage
10V
Power Dissipation
1.8W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
20V
Drain Source On State Resistance
2000µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.55V
No. of Pins
5Pins
Product Range
-
MSL
MSL 3 - 168 hours
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Mexico
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Mexico
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0005