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DRAM, SDR, 512 Mbit, 16M x 32bit, 143 MHz, BGA, 90 Pins


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IS42S32160F-7BLI   Datasheet
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Product Overview

IS42S32160F-7BLI is a 512Mb synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. It is a high speed CMOS, dynamic random-access memory designed to operate in either 3.3V Vdd/Vddq or 2.5V Vdd/Vddq memory systems, depending on the DRAM option. Internally configured as a quad-bank DRAM with a synchronous interface. The 512Mb SDRAM (536,870,912 bits) includes an AUTO REFRESH MODE, and a power-saving, power-down mode. All signals are registered on the positive edge of the clock signal, CLK. All inputs and outputs are LVTTL compatible.
  • Fully synchronous; all signals referenced to a positive clock edge
  • Internal bank for hiding row access/precharge
  • LVTTL interface, programmable burst sequence: sequential/interleave
  • Auto refresh (CBR), self refresh, 8K refresh cycles every 64ms
  • Random column address every clock cycle, programmable active-low CAS latency (2, 3 clocks)
  • Burst read/write and burst read/single write operations capability
  • Burst termination by burst stop and precharge command
  • 143MHz frequency, 7ns speed
  • 90-ball BGA package
  • Industrial temperature rating range from -40°C to +85°C

Product Information

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16M x 32bit





Surface Mount




MSL 3 - 168 hours

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Technical Documents (1)

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