Print Page
S29GL01GS11TFIV13
Flash Memory, Parallel NOR, 1 Gbit, 128M x 8bit, Parallel, TSOP, 56 Pins
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoS29GL01GS11TFIV13
Order Code
Re-Reel4332200RL
Cut Tape4332200
Product Range3V Parallel NOR Flash Memories
Your Part Number
922 In Stock
Need more?
922 Delivery in 3-4 Business Days(UK stock)
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | Php1,529.600 | Php1,529.60 |
| Total Price | Php1,529.60 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | Php1,529.600 |
| 10+ | Php1,380.300 |
| 50+ | Php1,259.800 |
| 200+ | Php1,217.800 |
| 500+ | Php1,185.900 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerINFINEON
Manufacturer Part NoS29GL01GS11TFIV13
Order Code
Re-Reel4332200RL
Cut Tape4332200
Product Range3V Parallel NOR Flash Memories
Technical Datasheet
Flash Memory TypeParallel NOR
Memory Density1Gbit
Memory Configuration128M x 8bit
InterfacesParallel
IC Case / PackageTSOP
No. of Pins56Pins
Clock Frequency Max-
Access Time110ns
Supply Voltage Min2.7V
Supply Voltage Max3.6V
Supply Voltage Nom3V
IC MountingSurface Mount
Operating Temperature Min-40°C
Operating Temperature Max85°C
Product Range3V Parallel NOR Flash Memories
MSL-
SVHCNo SVHC (25-Jun-2025)
Product Overview
S29GL01GS11TFIV13 is a S29GL01GS MIRRORBIT™ page-mode flash memory IC fabricated on 65nm process technology. This device offers a fast page access time as fast as 15ns with a corresponding random access time as fast as 90ns. This features a write buffer that allows a maximum of 256 words/512bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This device is ideal for today’s embedded applications that require higher density, better performance and lower power consumption.
- CMOS 3.0V core with versatile I/O, single supply (VCC) for read/program/erase (2.7V to 3.6V)
- Versatile I/O feature, wide I/O voltage range (VIO): 1.65V to VCC, 110ns random access time
- ×16 data bus, asynchronous 32-byte page read, 512-byte programming buffer
- Automatic error checking and correction (ECC)-internal hardware ECC with single bit error correction
- Sector erase-uniform 128kbyte sectors, advanced sector protection (ASP), 20 years data retention
- Status register, data polling, and ready/busy pin methods to determine device status
- Suspend and resume commands for program and erase operations, 100000 program/erase cycles
- Separate 1024-byte one time program (OTP) array with two lockable regions
- Thin small outline package (TSOP) standard pinout, industrial (–40 to 85°C) temperature
- VIO = 1.65V to VCC, VCC = 2.7V to 3.6V, highest address sector protected
Technical Specifications
Flash Memory Type
Parallel NOR
Memory Configuration
128M x 8bit
IC Case / Package
TSOP
Clock Frequency Max
-
Supply Voltage Min
2.7V
Supply Voltage Nom
3V
Operating Temperature Min
-40°C
Product Range
3V Parallel NOR Flash Memories
SVHC
No SVHC (25-Jun-2025)
Memory Density
1Gbit
Interfaces
Parallel
No. of Pins
56Pins
Access Time
110ns
Supply Voltage Max
3.6V
IC Mounting
Surface Mount
Operating Temperature Max
85°C
MSL
-
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85423290
US ECCN:3A991.b.1.a
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.001053