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| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | Php86.000 | Php86.00 |
| Total Price | Php86.00 | ||
| Quantity | Price |
|---|---|
| 1+ | Php86.000 |
| 10+ | Php54.500 |
| 100+ | Php39.100 |
| 500+ | Php28.800 |
| 1000+ | Php24.600 |
| 5000+ | Php24.200 |
Product Information
Product Overview
The IRLR3410TRPBF is a HEXFET® fifth generation single N-channel Power MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient device for use in a wide variety of applications. It is designed for surface-mounting using vapour phase, infrared or wave soldering techniques.
- Logic level gate drive
- Advanced process technology
- Fully avalanche rating
- Dynamic dV/dt rating
Applications
Power Management
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
N Channel
17A
TO-252AA
10V
79W
175°C
-
No SVHC (25-Jun-2025)
100V
0.105ohm
Surface Mount
2V
3Pins
-
MSL 1 - Unlimited
Technical Docs (2)
Alternatives for IRLR3410TRPBF
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Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate
