Print Page
IRFHE4250DTRPBF
Dual MOSFET, N Channel + Schottky, 25 V, 25 V, 303 A, 303 A, 700 µohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIRFHE4250DTRPBFCopy
Order Code
Re-Reel2577175RL
Cut Tape2577175
Product RangeFastIRFET HEXFET Series
Also Known AsSP001564116
Your Part Number
No Longer Manufactured
Packaging Options
Product Information
ManufacturerINFINEON
Manufacturer Part NoIRFHE4250DTRPBFCopy
Order Code
Re-Reel2577175RL
Cut Tape2577175
Product RangeFastIRFET HEXFET Series
Also Known AsSP001564116
Technical Datasheet
Drain Source Voltage Vds N Channel25V
Drain Source Voltage Vds P Channel25V
Continuous Drain Current Id N Channel303A
Continuous Drain Current Id P Channel303A
Transistor Case StylePQFN
No. of Pins32Pins
Power Dissipation N Channel156W
Power Dissipation P Channel156W
Operating Temperature Max150°C
Product RangeFastIRFET HEXFET Series
Qualification-
Technical Specifications
Drain Source Voltage Vds N Channel
25V
Continuous Drain Current Id N Channel
303A
Transistor Case Style
PQFN
Power Dissipation N Channel
156W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds P Channel
25V
Continuous Drain Current Id P Channel
303A
No. of Pins
32Pins
Power Dissipation P Channel
156W
Product Range
FastIRFET HEXFET Series
Technical Docs (1)
Associated Products
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Mexico
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Mexico
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0001