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IRFB4227PBF
Power MOSFET, N Channel, 200 V, 65 A, 0.024 ohm, TO-220AB, Through Hole
Image is for illustrative purposes only. Please refer to product description.
| Manufacturer | INFINEON |
|---|---|
| Manufacturer Part No | IRFB4227PBFCopy |
| Manufacturer Standard Lead Time | 52 weeks |
| Order Code | 1298536 |
| Product Range | HEXFET Series |
| Also Known As | SP001565892 |
| Your Part Number | |
| Technical Datasheet |
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| Quantity | Price |
|---|---|
| 1+ | Php261.000 |
| 10+ | Php131.000 |
| 100+ | Php117.900 |
| 500+ | Php96.300 |
| 1000+ | Php94.500 |
Price for:Each
Minimum: 1
Multiple: 1
Php261.00
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Product Information
| Manufacturer | INFINEON |
|---|---|
| Manufacturer Part No | IRFB4227PBFCopy |
| Manufacturer Standard Lead Time | 52 weeks |
| Order Code | 1298536 |
| Product Range | HEXFET Series |
| Also Known As | SP001565892 |
| Technical Datasheet | |
| Channel Type | N Channel |
| Drain Source Voltage Vds | 200V |
| Continuous Drain Current Id | 65A |
| Drain Source On State Resistance | 0.024ohm |
| Transistor Case Style | TO-220AB |
| Transistor Mounting | Through Hole |
| Rds(on) Test Voltage | 10V |
| Gate Source Threshold Voltage Max | 5V |
| Power Dissipation | 330W |
| No. of Pins | 3Pins |
| Operating Temperature Max | 175°C |
| Product Range | HEXFET Series |
| Qualification | - |
| MSL | - |
| SVHC | No SVHC (25-Jun-2025) |
Product Overview
The IRFB4227PBF is a 200V single N-channel HEXFET® Power MOSFET PDP switch designed to sustain, energy recovery and pass switch applications for plasma display panels. By adapting the latest techniques it achieves low on-resistance per silicon area and EPULSE rating.
- 175°C Operating temperature
- Low QG for fast response
- High repetitive peak current capability for reliable operation
- Short fall and rise times for fast switching
- Repetitive avalanche capability for robustness and reliability
Applications
Power Management, Industrial
Technical Specifications
| Channel Type | N Channel |
|---|---|
| Continuous Drain Current Id | 65A |
| Transistor Case Style | TO-220AB |
| Rds(on) Test Voltage | 10V |
| Power Dissipation | 330W |
| Operating Temperature Max | 175°C |
| Qualification | - |
| SVHC | No SVHC (25-Jun-2025) |
| Drain Source Voltage Vds | 200V |
|---|---|
| Drain Source On State Resistance | 0.024ohm |
| Transistor Mounting | Through Hole |
| Gate Source Threshold Voltage Max | 5V |
| No. of Pins | 3Pins |
| Product Range | HEXFET Series |
| MSL | - |
Technical Docs (3)
Associated Products
4 Products Found
Legislation and Environmental
| Country of Origin: Country in which last significant manufacturing process was carried outCountry of Origin: | China Country in which last significant manufacturing process was carried out |
|---|---|
| Tariff No: | 85412900 |
| US ECCN: | EAR99 |
| EU ECCN: | NLR |
| RoHS Compliant: | Yes RoHS |
| RoHS Phthalates Compliant: | Yes RoHS |
| SVHC: | No SVHC (25-Jun-2025) |
| Download Product Compliance Certificate | Product Compliance Certificate |
| Weight (kg): | .004536 |