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IRF6712STR1PBF
Power MOSFET, N Channel, 25 V, 17 A, 4900 µohm, DirectFET SQ, Surface Mount
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No Longer Stocked
Product Information
ManufacturerINFINEON
Manufacturer Part NoIRF6712STR1PBFCopy
Order Code1436938
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds25V
Continuous Drain Current Id17A
Drain Source On State Resistance4900µohm
Transistor Case StyleDirectFET SQ
Transistor MountingSurface Mount
Rds(on) Test Voltage20V
Gate Source Threshold Voltage Max1.9V
Power Dissipation2.2mW
No. of Pins5Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
17A
Transistor Case Style
DirectFET SQ
Rds(on) Test Voltage
20V
Power Dissipation
2.2mW
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
25V
Drain Source On State Resistance
4900µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.9V
No. of Pins
5Pins
Product Range
-
MSL
MSL 3 - 168 hours
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Mexico
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Mexico
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0005