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IPP086N10N3GXKSA1
Power MOSFET, N Channel, 100 V, 80 A, 7400 µohm, TO-220, Through Hole
339 In Stock
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| Quantity | Price |
|---|---|
| 1+ | Php163.900 |
| 10+ | Php91.300 |
| 100+ | Php72.600 |
| 500+ | Php59.400 |
| 1000+ | Php53.000 |
| 5000+ | Php46.600 |
Price for:Each
Minimum: 1
Multiple: 1
Php163.90
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIPP086N10N3GXKSA1
Order Code2709893
Product RangeOptiMOS 3
Also Known AsIPP086N10N3 G, SP000680840
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id80A
Drain Source On State Resistance7400µohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.7V
Power Dissipation125W
No. of Pins3Pins
Operating Temperature Max175°C
Product RangeOptiMOS 3
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
80A
Transistor Case Style
TO-220
Rds(on) Test Voltage
10V
Power Dissipation
125W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
100V
Drain Source On State Resistance
7400µohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
2.7V
No. of Pins
3Pins
Product Range
OptiMOS 3
MSL
-
Technical Docs (1)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000454