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ManufacturerINFINEON
Manufacturer Part NoIPP023NE7N3GXKSA1
Order Code2212851
Also Known AsIPP023NE7N3 G, SP000641722
Technical Datasheet
607 In Stock
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607 Delivery in 3-4 Business Days(UK stock)
Quantity | Price |
---|---|
1+ | Php189.600 |
10+ | Php141.600 |
100+ | Php114.800 |
500+ | Php101.600 |
1000+ | Php92.800 |
Price for:Each
Minimum: 1
Multiple: 1
Php189.60
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIPP023NE7N3GXKSA1
Order Code2212851
Also Known AsIPP023NE7N3 G, SP000641722
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds75V
Continuous Drain Current Id120A
Drain Source On State Resistance0.0021ohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.1V
Power Dissipation300W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The IPP023NE7N3 G is a N-channel Power MOSFET with OptiMOS™ technology specializes in synchronous rectification applications. Based on the leading 80V technology these 75V products feature simultaneously lowest ON-state resistances and superior switching performance.
- World's lowest RDS (ON)
- Very low Qg and Qgd
- Excellent gate charge x RDS (ON) product (FOM)
- MSL1 rated
- Increased efficiency
- Highest power density
- Less paralleling required
- Smallest board-space consumption
- Easy-to-design products
- Ideal for high frequency switching and DC-to-DC converters
- Normal level
- 100% avalanche tested
- Qualified according to JEDEC for target applications
- Green device
Applications
Power Management, Motor Drive & Control, Audio, Communications & Networking
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
120A
Transistor Case Style
TO-220
Rds(on) Test Voltage
10V
Power Dissipation
300W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
75V
Drain Source On State Resistance
0.0021ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
3.1V
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (3)
Associated Products
3 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.003184