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IPG20N06S2L35ATMA1
Dual MOSFET, N Channel, 55 V, 55 V, 20 A, 20 A, 0.028 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIPG20N06S2L35ATMA1
Order Code2443440RL
Also Known AsIPG20N06S2L-35, SP000613718
Your Part Number
Technical Datasheet
20,372 In Stock
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20372 Delivery in 3-4 Business Days(UK stock)
| Quantity | Price |
|---|---|
| 50+ | Php52.500 |
| 250+ | Php43.600 |
| 1000+ | Php38.500 |
| 3000+ | Php33.500 |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 5
Php5,250.00
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIPG20N06S2L35ATMA1
Order Code2443440RL
Also Known AsIPG20N06S2L-35, SP000613718
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds N Channel55V
Drain Source Voltage Vds55V
Drain Source Voltage Vds P Channel55V
Continuous Drain Current Id20A
On Resistance Rds(on)0.028ohm
Continuous Drain Current Id N Channel20A
Continuous Drain Current Id P Channel20A
Drain Source On State Resistance N Channel0.028ohm
Transistor MountingSurface Mount
Drain Source On State Resistance P Channel0.028ohm
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.6V
Transistor Case StyleTDSON
Power Dissipation Pd65W
No. of Pins8Pins
Power Dissipation N Channel65W
Power Dissipation P Channel65W
Operating Temperature Max175°C
Product Range-
QualificationAEC-Q101
Automotive Qualification StandardAEC-Q101
SVHCNo SVHC (25-Jun-2025)
Product Overview
- OptiMOS™ power transistor
- Dual N-channel logic level - enhancement mode
- Automotive AEC Q101 qualified
- 175°C operating temperature
- 100% avalanche tested
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds N Channel
55V
Drain Source Voltage Vds P Channel
55V
On Resistance Rds(on)
0.028ohm
Continuous Drain Current Id P Channel
20A
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Transistor Case Style
TDSON
No. of Pins
8Pins
Power Dissipation P Channel
65W
Product Range
-
Automotive Qualification Standard
AEC-Q101
SVHC
No SVHC (25-Jun-2025)
Channel Type
N Channel
Drain Source Voltage Vds
55V
Continuous Drain Current Id
20A
Continuous Drain Current Id N Channel
20A
Drain Source On State Resistance N Channel
0.028ohm
Drain Source On State Resistance P Channel
0.028ohm
Gate Source Threshold Voltage Max
1.6V
Power Dissipation Pd
65W
Power Dissipation N Channel
65W
Operating Temperature Max
175°C
Qualification
AEC-Q101
MSL
MSL 1 - Unlimited
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000141