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IPD50N04S4L08ATMA1
Power MOSFET, N Channel, 40 V, 50 A, 7300 µohm, TO-252 (DPAK), Surface Mount
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ManufacturerINFINEON
Manufacturer Part NoIPD50N04S4L08ATMA1
Order Code4384136
Product RangeOptiMOS-T2 Series
Your Part Number
Technical Datasheet
Product Information
ManufacturerINFINEON
Manufacturer Part NoIPD50N04S4L08ATMA1
Order Code4384136
Product RangeOptiMOS-T2 Series
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id50A
Drain Source On State Resistance7300µohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.7V
Power Dissipation46W
No. of Pins3Pins
Operating Temperature Max175°C
Product RangeOptiMOS-T2 Series
QualificationAEC-Q101
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
50A
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
46W
Operating Temperature Max
175°C
Qualification
AEC-Q101
Drain Source Voltage Vds
40V
Drain Source On State Resistance
7300µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.7V
No. of Pins
3Pins
Product Range
OptiMOS-T2 Series
SVHC
No SVHC (25-Jun-2025)
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0003