IKW30N60H3FKSA1
IGBT, 30 A, 2.4 V, 187 W, 600 V, TO-247, 3 Pins
1,680 more incoming. You can reserve stock now
| Quantity | Price |
|---|---|
| 1+ | Php359.100 |
| 10+ | Php235.800 |
| 100+ | Php147.200 |
| 500+ | Php141.800 |
| 1000+ | Php135.900 |
Product Information
Product Overview
The IKW30N60H3 is a 600V Discrete IGBT with very soft, fast recovery anti-parallel diode designed specifically to replace planar MOSFETs in applications switching at frequencies below 70kHz. The key feature of this family is a MOSFET-like turn-off switching behaviour and thus leading to low turn off losses. Discrete IGBT is ideal for hard switching applications as well as soft switching applications and other resonant applications.
- Low switching losses for high efficiency
- Fast switching behaviour with low EMI emissions
- Low gate resistor selection possible (down to 5Ω) whilst maintaining excellent switching behaviour
- Short circuit capability
- Excellent performance
- Low switching and conduction losses
Applications
Power Management, Alternative Energy
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
30A
187W
TO-247
175°C
-
No SVHC (25-Jun-2025)
2.4V
600V
3Pins
Through Hole
-
Technical Docs (3)
Associated Products
1 Product Found
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate